ENTRY            21422   19801107                             00002142200000001 
SUBENT        21422001   19801107                             00002142200100001 
BIB                 14         27                                 2142200100002 
INSTITUTE  (2SWTNEU)                                              2142200100003 
REFERENCE  (J,NIM,52,222,6706)                                    2142200100004 
           (P,EANDC(OR)-48,,6705) ABSTRACT.                       2142200100005 
AUTHOR     (J.E.DURISCH,F.FOROUGHI,J.ROSSEL)                      2142200100006 
TITLE      -MONITOR FOR 4 TO 8 MEV NEUTRONS SUITABLE FOR (N,P)    2142200100007 
            AND (N,A) EXPERIMENTS -.                              2142200100008 
FACILITY   (VDG  ) VAN DER GRAAFF ACCELERATOR.                    2142200100009 
INC-SOURCE (D-D  ) DEUTERON BEAM ON DEUTERIUM GAS TARGET          2142200100010 
            GIVING MONOENERGETIC NEUTRONS OF 6 MEV.               2142200100011 
SAMPLE     .SILICON DETECTOR MATERIAL USED AS SAMPLE.             2142200100012 
METHOD     (ASSOP) ASSOCIATED ALPHA COUNTING.                     2142200100013 
DETECTOR   (SOLST) N-TYPE SILICON SURFACE BARRIER DETECTOR,       2142200100014 
            WITH ACTIVE SURFACE 1.77 CM*2, RESISTIVITY 2000       2142200100015 
            OHM-CM, MAXIMUM DEPLETION DEPTH 270 MICRONS,          2142200100016 
            DENSITY 2.33 G/CC .                                   2142200100017 
MONITOR    (1-H-1(N,EL)1-H-1,,SIG) RECOIL PROTON COUNTING         2142200100018 
            FROM A C-H(2) SAMPLE, WITH CROSS SECTION TAKEN FROM   2142200100019 
            MARION AND FOWLER, FAST NEUTRON PHYSICS,              2142200100020 
            INTERSCIENCE, NEW YORK, 1960, FOR ANGULAR             2142200100021 
            DISTRIBUTION.                                         2142200100022 
STATUS     .TEXT, NIM,52,222.                                     2142200100023 
HISTORY    (800307C)                                              2142200100024 
           (800318E)                                              2142200100025 
CORRECTION .CORRECTED FOR EDGE EFFECTS, BACKGROUND, AND           2142200100026 
            PARASITIC REACTIONS IN SILICON.                       2142200100027 
ERR-ANALYS .TOTAL ERROR IS GIVEN AT ONE STANDARD DEVIATION,       2142200100028 
            AND INCLUDES SYSTEMATIC ERRORS DISCUSSED IN DETAIL.   2142200100029 
ENDBIB              27          0                                 2142200100030 
NOCOMMON             0          0                                 2142200100031 
ENDSUBENT           30          0                                 2142200199999 
SUBENT        21422002   19801107                             00002142200200001 
BIB                  2          2                                 2142200200002 
REACTION   (14-SI-29(N,A)12-MG-26,PAR,SIG) PARTIAL CROSS SECTION  2142200200003 
STATUS     .TEXT OF NIM,52,222.                                   2142200200004 
ENDBIB               2          0                                 2142200200005 
NOCOMMON             0          0                                 2142200200006 
DATA                 4          1                                 2142200200007 
EN         E-LVL      DATA       DATA-ERR                         2142200200008 
MEV        MEV        MB         MB                               2142200200009 
 6.0000E+00 0.0000E+00 3.0000E+01 4.0000E+00                      2142200200010 
ENDDATA              3          0                                 2142200200011 
ENDSUBENT           10          0                                 2142200299999 
ENDENTRY             2          0                                 2142299999999