ENTRY A0634 20220809 A102A063400000001 SUBENT A0634001 20220809 A102A063400100001 BIB 11 20 A063400100002 TITLE Reactions in the 9-Be+9-Be system at low energies A063400100003 AUTHOR (L.Jarczyk,B.Kamys,A.Magiera,A.Strzalkowski, A063400100004 A.Szczurek,K.Bodek,M.Hugi,J.Lang,R.Muller, E.Ungricht) A063400100005 REFERENCE (J,JP/G,11,843,1985) A063400100006 INSTITUTE (3POLUJK,2SWTETH) A063400100007 FACILITY (VDGT,2SWTETH) A063400100008 REL-REF (N,,E.Ungricht+,J,NP/A,313,376,1979) A063400100009 COMMENT - By Author - The absolute normalization of the A063400100010 reaction cross section was obtained from a comparison A063400100011 with the simultaneously observed elastic scattering, foA063400100012 which cross sections were known from REL-REF. A063400100013 METHOD (SITA,EDE) A063400100014 ADD-RES (POT) Parameters of Optical Model For Be-9+Be-9 System.A063400100015 (COMP) Statistical Model and DWBA Analysis. A063400100016 ERR-ANALYS (DATA-ERR) No information about source of uncertainty A063400100017 HISTORY (19990608C) By F.C. A063400100018 (19990617U) Last checking has been done. A063400100019 (19990621A) DATE is corrected A063400100020 (20220809A) SD: Corrections in all Subents. A063400100021 Subents 002+003; 006+007; 008+009 were merged. A063400100022 ENDBIB 20 0 A063400100023 NOCOMMON 0 0 A063400100024 ENDSUBENT 23 0 A063400199999 SUBENT A0634002 20220809 A102A063400200001 BIB 5 10 A063400200002 REACTION (4-BE-9(4-BE-9,P)7-N-17,PAR,DA) A063400200003 LEVEL-PROP (7-N-17,E-LVL=1.37,SPIN=1.5,PARITY=-1.) A063400200004 (7-N-17,E-LVL=1.85,SPIN=0.5,PARITY=+1.) A063400200005 (7-N-17,E-LVL=1.91,SPIN=2.5,PARITY=+1.) A063400200006 DETECTOR (TELES,SOLST,SOLST) Thin 40 um semiconductor Delta-E A063400200007 counter followed by a thick semiconductor E-counter. A063400200008 STATUS (CURVE) Fig. 3(a,b) from J.Phys.,G11(1985)843 A063400200009 HISTORY (20220809A) SD: SF9=EXP deleted from REACTION code. A063400200010 ANG-ERR -> ANG-ERR-D; ERR-T -> DATA-ERR; A063400200011 E-LVL-MIN/MAX -> E-LVL. Data from Subent 003 added. A063400200012 ENDBIB 10 0 A063400200013 COMMON 2 3 A063400200014 EN ANG-ERR-D A063400200015 MEV ADEG A063400200016 14. 1.3 A063400200017 ENDCOMMON 3 0 A063400200018 DATA 5 23 A063400200019 E-LVL E-LVL ANG-CM DATA-CM DATA-ERR A063400200020 MEV MEV ADEG MU-B/SR MU-B/SR A063400200021 1.37 22.9 13. 1.3 A063400200022 1.37 28.7 10.4 0.9 A063400200023 1.37 35.4 9.1 0.7 A063400200024 1.37 41.1 8.5 0.4 A063400200025 1.37 51.6 6.9 0.4 A063400200026 1.37 83.1 4.3 0.6 A063400200027 1.37 90.8 5.4 0.4 A063400200028 1.37 95.6 4.1 0.3 A063400200029 1.37 110.8 6.2 0.5 A063400200030 1.37 128. 6.9 0.9 A063400200031 1.37 146.2 9.3 0.8 A063400200032 1.85 1.91 18.4 23.4 1.2 A063400200033 1.85 1.91 23.2 23.8 1.3 A063400200034 1.85 1.91 29. 22.6 1.2 A063400200035 1.85 1.91 34.8 21.5 1.4 A063400200036 1.85 1.91 40.7 15.5 1.3 A063400200037 1.85 1.91 52.3 12.9 1.1 A063400200038 1.85 1.91 85. 11.6 1. A063400200039 1.85 1.91 90.8 10.4 1. A063400200040 1.85 1.91 96.4 12.4 1.3 A063400200041 1.85 1.91 110.9 10. 1.2 A063400200042 1.85 1.91 127. 17.2 1.7 A063400200043 1.85 1.91 146. 23.6 1.8 A063400200044 ENDDATA 25 0 A063400200045 ENDSUBENT 44 0 A063400299999 NOSUBENT A0634003 20220809 A102A063400300001 SUBENT A0634004 20220809 A102A063400400001 BIB 5 9 A063400400002 REACTION (4-BE-9(4-BE-9,D)7-N-16,PAR,DA) A063400400003 LEVEL-PROP (7-N-16,E-LVL=0.,SPIN=2.0,PARITY=-1.) A063400400004 (7-N-16,E-LVL=0.12,SPIN=0.,PARITY=-1.) A063400400005 DETECTOR (TELES,SOLST,SOLST) Thin 40 um semiconductor Delta-E A063400400006 counter followed by a thick semiconductor E-counter. A063400400007 STATUS (CURVE) Fig. 3(c) from J.Phys.,G11(1985)843 A063400400008 HISTORY (20220809A) SD: SF9=EXP deleted from REACTION code. A063400400009 ANG-ERR -> ANG-ERR-D; ERR-T -> DATA-ERR; A063400400010 E-LVL-MIN/MAX -> E-LVL. A063400400011 ENDBIB 9 0 A063400400012 COMMON 4 3 A063400400013 EN E-LVL E-LVL ANG-ERR-D A063400400014 MEV MEV MEV ADEG A063400400015 14. 0. 0.12 1.3 A063400400016 ENDCOMMON 3 0 A063400400017 DATA 3 17 A063400400018 ANG-CM DATA-CM DATA-ERR A063400400019 ADEG MU-B/SR MU-B/SR A063400400020 20.1 74. 3. A063400400021 26.8 77. 3. A063400400022 32.5 74. 2.8 A063400400023 38.2 69.2 2.3 A063400400024 44. 55.6 2.5 A063400400025 50.6 50.3 1.8 A063400400026 56.4 46.9 2.1 A063400400027 63.1 44.5 1.6 A063400400028 67.8 39.7 2.5 A063400400029 73.6 37.8 1.8 A063400400030 79.3 42.1 2.1 A063400400031 86. 40.7 1.8 A063400400032 90.8 42.7 1.6 A063400400033 96.5 43.1 1.8 A063400400034 101.3 43.6 2.1 A063400400035 115.6 45. 3. A063400400036 133.8 55. 4. A063400400037 ENDDATA 19 0 A063400400038 ENDSUBENT 37 0 A063400499999 SUBENT A0634005 20220809 A102A063400500001 BIB 5 7 A063400500002 REACTION (4-BE-9(4-BE-9,T)7-N-15,PAR,DA) A063400500003 LEVEL-PROP (7-N-15,E-LVL=0.,SPIN=0.5,PARITY=-1.) A063400500004 DETECTOR (TELES,SOLST,SOLST) Thin 40 um semiconductor Delta-E A063400500005 counter followed by a thick semiconductor E-counter. A063400500006 STATUS (CURVE) Fig. 3(d) from J.Phys.,G11(1985)843 A063400500007 HISTORY (20220809A) SD: SF9=EXP deleted from REACTION code. A063400500008 ANG-ERR -> ANG-ERR-D; ERR-T -> DATA-ERR. A063400500009 ENDBIB 7 0 A063400500010 COMMON 3 3 A063400500011 EN E-LVL ANG-ERR-D A063400500012 MEV MEV ADEG A063400500013 14. 0. 1.4 A063400500014 ENDCOMMON 3 0 A063400500015 DATA 3 18 A063400500016 ANG-CM DATA-CM DATA-ERR A063400500017 ADEG MU-B/SR MU-B/SR A063400500018 20.9 59. 4. A063400500019 28.6 50.1 3. A063400500020 35.4 41.6 3. A063400500021 41.2 42.7 2.1 A063400500022 47.8 49. 2.7 A063400500023 54.7 31.9 2.4 A063400500024 61.7 10.9 3. A063400500025 66.4 15.5 2.7 A063400500026 74. 20. 3. A063400500027 76.9 20.6 2.7 A063400500028 83.6 21.7 2.4 A063400500029 88.4 24.5 2.1 A063400500030 94.1 22.8 2.4 A063400500031 99.9 19.4 2.7 A063400500032 104.6 29.7 2.1 A063400500033 120.1 15. 4. A063400500034 136.1 40. 6. A063400500035 153.2 55. 5. A063400500036 ENDDATA 20 0 A063400500037 ENDSUBENT 36 0 A063400599999 SUBENT A0634006 20220809 A102A063400600001 BIB 5 8 A063400600002 REACTION (4-BE-9(4-BE-9,A)6-C-14,PAR,DA) A063400600003 LEVEL-PROP (6-C-14,E-LVL=6.09,SPIN=1.0,PARITY=-1.) A063400600004 DETECTOR (TELES,SOLST,SOLST) Thin 15 um semiconductor Delta-E A063400600005 counter followed by a thick semiconductor E-counter. A063400600006 STATUS (CURVE) Fig. 4(a,b) from J.Phys.,G11(1985)843 A063400600007 HISTORY (20220809A) SD: SF9=EXP deleted from REACTION code. A063400600008 ANG-ERR -> ANG-ERR-D; ERR-T -> DATA-ERR. Data from A063400600009 Subent 007 added. A063400600010 ENDBIB 8 0 A063400600011 COMMON 2 3 A063400600012 EN ANG-ERR-D A063400600013 MEV ADEG A063400600014 14. 1.3 A063400600015 ENDCOMMON 3 0 A063400600016 DATA 4 32 A063400600017 E-LVL ANG-CM DATA-CM DATA-ERR A063400600018 MEV ADEG MU-B/SR MU-B/SR A063400600019 6.09 20.5 144. 3. A063400600020 6.09 27. 105. 5. A063400600021 6.09 33.6 79. 4. A063400600022 6.09 38.2 66. 4. A063400600023 6.09 45.7 70. 4. A063400600024 6.09 48. 66.1 1.6 A063400600025 6.09 52.2 67. 3. A063400600026 6.09 58.7 62.4 2.7 A063400600027 6.09 62.5 63. 3. A063400600028 6.09 70.9 70. 3. A063400600029 6.09 77.4 77. 4. A063400600030 6.09 86.7 91. 3. A063400600031 6.09 93.2 71.9 2.3 A063400600032 6.09 109.1 77. 3. A063400600033 6.09 128.6 60. 4. A063400600034 6.09 145.4 64. 4. A063400600035 7.34 20.2 313. 5. A063400600036 7.34 26.8 253. 8. A063400600037 7.34 33.4 207. 8. A063400600038 7.34 40. 152. 6. A063400600039 7.34 47.4 141. 7. A063400600040 7.34 53.8 152. 8. A063400600041 7.34 59.4 144. 6. A063400600042 7.34 65. 118. 7. A063400600043 7.34 71.4 103. 7. A063400600044 7.34 77.9 99. 9. A063400600045 7.34 83.4 93. 6. A063400600046 7.34 89. 87. 7. A063400600047 7.34 95.4 89. 7. A063400600048 7.34 108.3 85. 7. A063400600049 7.34 127.5 136. 8. A063400600050 7.34 141.2 166. 6. A063400600051 ENDDATA 34 0 A063400600052 ENDSUBENT 51 0 A063400699999 NOSUBENT A0634007 20220809 A102A063400700001 SUBENT A0634008 20220809 A102A063400800001 BIB 5 9 A063400800002 REACTION (4-BE-9(4-BE-9,3-LI-7)5-B-11,PAR,DA) A063400800003 DETECTOR (TELES,SOLST,SOLST) Thin 15 um semiconductor Delta-E A063400800004 counter followed by a thick semiconductor E-counter. A063400800005 EN-SEC (E-LVL1,3-LI-7) A063400800006 (E-LVL2,5-B-11) A063400800007 STATUS (CURVE) Fig. 4(c,d) from J.Phys.,G11(1985)843 A063400800008 HISTORY (20220809A) SD: SF9=EXP deleted from REACTION code. A063400800009 ANG-ERR -> ANG-ERR-D; ERR-T -> DATA-ERR. Data from A063400800010 Subent 009 added. A063400800011 ENDBIB 9 0 A063400800012 COMMON 2 3 A063400800013 EN ANG-ERR-D A063400800014 MEV ADEG A063400800015 14. 1.3 A063400800016 ENDCOMMON 3 0 A063400800017 DATA 5 13 A063400800018 E-LVL1 E-LVL2 ANG-CM DATA-CM DATA-ERR A063400800019 MEV MEV ADEG MU-B/SR MU-B/SR A063400800020 0.48 0. 26.1 204. 7. A063400800021 0.48 0. 44.7 90. 4. A063400800022 0.48 0. 55. 69. 4. A063400800023 0.48 0. 64.3 59. 3. A063400800024 0.48 0. 74.6 54. 3. A063400800025 0.48 0. 83.9 54. 3. A063400800026 0.48 0. 93.2 53. 3. A063400800027 0.48 0. 101.6 57. 3. A063400800028 0. 2.12 31.9 67.8 2.2 A063400800029 0. 2.12 42.1 58.4 2. A063400800030 0. 2.12 62.6 39.2 1.6 A063400800031 0. 2.12 71.8 33.6 1.8 A063400800032 0. 2.12 83.7 41.5 2.2 A063400800033 ENDDATA 15 0 A063400800034 ENDSUBENT 33 0 A063400899999 NOSUBENT A0634009 20220809 A102A063400900001 SUBENT A0634010 20220809 A102A063401000001 BIB 8 17 A063401000002 REACTION (4-BE-9(4-BE-9,4-BE-8)4-BE-10,PAR,DA) A063401000003 PART-DET (A) Be-8 ejectiles were registered as two decay alpha A063401000004 particles measured in coincidence in a pair of A063401000005 semiconductor counters. A063401000006 METHOD (COINC) A063401000007 EN-SEC (E-LVL1,4-BE-8) A063401000008 (E-LVL2,4-BE-10) A063401000009 SAMPLE The thickness of the self-supporting 9Be targets used A063401000010 in these measurements was between 40 and 60 ug/cm2. A063401000011 Special precautions were undertaken to diminish the A063401000012 carbon deposit on the target built up during the A063401000013 measurements. A063401000014 DETECTOR (TELES,SOLST,SOLST) Thin 15 um semiconductor Delta-E A063401000015 counter followed by a thick semiconductor E-counter. A063401000016 STATUS (CURVE) Fig. 5 from J.Phys.,G11(1985)843 A063401000017 HISTORY (20220809A) SD: SF9=EXP deleted from REACTION code. A063401000018 ANG-ERR->ANG-ERR-D; ERR-T->DATA-ERR; E-EXC1/2->E-LVL1/2A063401000019 ENDBIB 17 0 A063401000020 COMMON 4 3 A063401000021 EN E-LVL1 E-LVL2 ANG-ERR-D A063401000022 MEV MEV MEV ADEG A063401000023 20. 0. 0. 0.6 A063401000024 ENDCOMMON 3 0 A063401000025 DATA 3 26 A063401000026 ANG-CM DATA-CM DATA-ERR A063401000027 ADEG MU-B/SR PER-CENT A063401000028 26.1 0.353 6. A063401000029 30.4 0.277 5. A063401000030 34.8 0.222 5. A063401000031 42.9 0.174 7. A063401000032 47.5 0.166 5. A063401000033 54.4 0.1 5. A063401000034 59.9 9.45E-02 2.3 A063401000035 64.9 0.117 4. A063401000036 68.3 0.12 4. A063401000037 72.6 9.24E-02 2.7 A063401000038 76.3 4.81E-02 5. A063401000039 79.9 2.32E-02 4. A063401000040 84.2 4.15E-02 4. A063401000041 88. 5.4E-02 6. A063401000042 92.1 5.01E-02 5. A063401000043 95.7 4.16E-02 4. A063401000044 99.2 2.52E-02 4. A063401000045 103.4 3.36E-02 5. A063401000046 107. 6.7E-02 4. A063401000047 110.6 0.1051 2.3 A063401000048 113.4 0.122 6. A063401000049 117.8 0.1 5. A063401000050 121.1 9.25E-02 3. A063401000051 124.4 8.9E-02 3. A063401000052 127.3 0.112 5. A063401000053 129.5 0.153 10. A063401000054 ENDDATA 28 0 A063401000055 ENDSUBENT 54 0 A063401099999 ENDENTRY 10 0 A063499999999