ENTRY C0343 20111118 C113C034300000001 SUBENT C0343001 20111118 C113C034300100001 BIB 14 37 C034300100002 INSTITUTE (1USABNL) C034300100003 REFERENCE (J,PR,128,1916,1962) C034300100004 AUTHOR (N.T.Porile) C034300100005 TITLE Simple Nuclear Reactions of Indium with 30- and 2.9- C034300100006 GeV Protons C034300100007 FACILITY (SYNCH,1USABNL) The irradiations at 30 GeV were C034300100008 performed in the circulating beam of the Brookhaven C034300100009 Alternating Gradient Synchrotron. C034300100010 The irradiations at 2.9 GeV were performed in the C034300100011 circulating beam of the Cosmotron. C034300100012 METHOD (ACTIV,CHSEP,STTA) C034300100013 DETECTOR (PROPC,NAICR) The gamma-ray spectra were usually C034300100014 measured with the scintillation counter subtending a C034300100015 large solid angle. C034300100016 The activity measurements were performed with a C034300100017 calibrated 3-in. by 3-in. NaI crystal connected to a C034300100018 256 channel pulse-height analyzer as well as with C034300100019 beta-proportional counters. C034300100020 SAMPLE (49-IN-115,NAT=0.957) C034300100021 MONITOR ((MONIT)13-AL-27(P,X)11-NA-24,,SIG) C034300100022 The activity of Na24 in the monitor foil was determinedC034300100023 by assay of the foil with a calibrated betaproportionalC034300100024 counter. C034300100025 MONIT-REF (B0022003,J.B.Cumming,J,ARN,13,261,1963) C034300100026 ERR-ANALYS Individual cross sections have an error of 5-20% due C034300100027 to uncertainties in the decay schemes and to C034300100028 systematic errors in analysis of gamma spectra. C034300100029 STATUS (TABLE) Data are from Tbl.II of PR,128,1916,1962 C034300100030 COMMENT ** By authors ** In most cases, there were no C034300100031 systematic differences between results of thin and C034300100032 thick target experiments. C034300100033 HISTORY (19870811C) C034300100034 (20030418A) Converted to new date formats, lower case. C034300100035 Reaction SF3 updated. Subentries split C034300100036 for different targets. C034300100037 (20111118A) SD: SF3 field in Reaction code of Subents C034300100038 6-11,17-20,25-28 are changed. Monitor moved to Subent 1C034300100039 ENDBIB 37 0 C034300100040 NOCOMMON 0 0 C034300100041 ENDSUBENT 40 0 C034300199999 SUBENT C0343002 20111118 C113C034300200001 BIB 3 7 C034300200002 REACTION (49-IN-0(P,X)49-IN-109,,SIG) C034300200003 SAMPLE Thin targets consisted of high-purity (99.99%) indium C034300200004 metal evaporated to 4 mg/cm2 thickness onto high- C034300200005 purity 0.001-in. aluminum. Target stack also included C034300200006 a 0.001-in. aluminum monitor and several thin aluminumC034300200007 foils. Over-all target thickness about 20-25 mg/cm2. C034300200008 DECAY-DATA (49-IN-109-G,4.3HR,DG,205.,0.70) C034300200009 ENDBIB 7 0 C034300200010 NOCOMMON 0 0 C034300200011 DATA 3 4 C034300200012 EN DATA MONIT C034300200013 GEV MB MB C034300200014 30. 7.0 8.6 C034300200015 30. 7.5 8.6 C034300200016 2.9 7.9 9.1 C034300200017 2.9 8.0 9.1 C034300200018 ENDDATA 6 0 C034300200019 ENDSUBENT 18 0 C034300299999 SUBENT C0343003 20111118 C113C034300300001 BIB 3 7 C034300300002 REACTION (49-IN-0(P,X)49-IN-110-M,,SIG) C034300300003 SAMPLE Thin targets consisted of high-purity (99.99%) indium C034300300004 metal evaporated to 4 mg/cm2 thickness onto high- C034300300005 purity 0.001-in. aluminum. Target stack also included C034300300006 a 0.001-in. aluminum monitor and several thin aluminumC034300300007 foils. Over-all target thickness about 20-25 mg/cm2. C034300300008 DECAY-DATA (49-IN-110-G,4.9HR,DG,660.,1.0) C034300300009 ENDBIB 7 0 C034300300010 NOCOMMON 0 0 C034300300011 DATA 3 4 C034300300012 EN DATA MONIT C034300300013 GEV MB MB C034300300014 30. 9.4 8.6 C034300300015 30. 9.6 8.6 C034300300016 2.9 8.5 9.1 C034300300017 2.9 8.8 9.1 C034300300018 ENDDATA 6 0 C034300300019 ENDSUBENT 18 0 C034300399999 SUBENT C0343004 20111118 C113C034300400001 BIB 3 7 C034300400002 REACTION (49-IN-0(P,X)49-IN-111,,SIG) C034300400003 SAMPLE Thin targets consisted of high-purity (99.99%) indium C034300400004 metal evaporated to 4 mg/cm2 thickness onto high- C034300400005 purity 0.001-in. aluminum. Target stack also included C034300400006 a 0.001-in. aluminum monitor and several thin aluminumC034300400007 foils. Over-all target thickness about 20-25 mg/cm2. C034300400008 DECAY-DATA (49-IN-111-G,2.84D,DG,172.,0.86,DG,247.,0.94) C034300400009 ENDBIB 7 0 C034300400010 NOCOMMON 0 0 C034300400011 DATA 3 4 C034300400012 EN DATA MONIT C034300400013 GEV MB MB C034300400014 30. 13.2 8.6 C034300400015 30. 11.2 8.6 C034300400016 2.9 14.7 9.1 C034300400017 2.9 15.1 9.1 C034300400018 ENDDATA 6 0 C034300400019 ENDSUBENT 18 0 C034300499999 SUBENT C0343005 20111118 C113C034300500001 BIB 3 7 C034300500002 REACTION (49-IN-0(P,X)49-IN-113-M,,SIG) C034300500003 SAMPLE Thin targets consisted of high-purity (99.99%) indium C034300500004 metal evaporated to 4 mg/cm2 thickness onto high- C034300500005 purity 0.001-in. aluminum. Target stack also included C034300500006 a 0.001-in. aluminum monitor and several thin aluminumC034300500007 foils. Over-all target thickness about 20-25 mg/cm2. C034300500008 DECAY-DATA (49-IN-113-M,104.MIN,DG,393.,0.65) C034300500009 ENDBIB 7 0 C034300500010 NOCOMMON 0 0 C034300500011 DATA 3 4 C034300500012 EN DATA MONIT C034300500013 GEV MB MB C034300500014 30. 4.0 8.6 C034300500015 30. 3.2 8.6 C034300500016 2.9 3.8 9.1 C034300500017 2.9 3.6 9.1 C034300500018 ENDDATA 6 0 C034300500019 ENDSUBENT 18 0 C034300599999 SUBENT C0343006 20111118 C113C034300600001 BIB 4 11 C034300600002 REACTION (49-IN-115(P,X)49-IN-114-M,,SIG) C034300600003 The cross section for the formation of In-114m has C034300600004 been corrected for the isotopic abundance of C034300600005 In-115(0.957) C034300600006 SAMPLE Thin targets consisted of high-purity (99.99%) indium C034300600007 metal evaporated to 4 mg/cm2 thickness onto high- C034300600008 purity 0.001-in. aluminum. Target stack also included C034300600009 a 0.001-in. aluminum monitor and several thin aluminumC034300600010 foils. Over-all target thickness about 20-25 mg/cm2. C034300600011 DECAY-DATA (49-IN-114-M,49.D,DG,191.,0.18) C034300600012 HISTORY (20111118A) SD: SF1 field in Reaction code changed. C034300600013 ENDBIB 11 0 C034300600014 NOCOMMON 0 0 C034300600015 DATA 3 4 C034300600016 EN DATA MONIT C034300600017 GEV MB MB C034300600018 30. 39. 8.6 C034300600019 30. 40. 8.6 C034300600020 2.9 40. 9.1 C034300600021 2.9 39. 9.1 C034300600022 ENDDATA 6 0 C034300600023 ENDSUBENT 22 0 C034300699999 SUBENT C0343007 20111118 C113C034300700001 BIB 4 11 C034300700002 REACTION (49-IN-115(P,INL)49-IN-115-M,,SIG) C034300700003 The cross section for the formation of In-115m has C034300700004 been corrected for the isotopic abundance of C034300700005 In-115(0.957) C034300700006 SAMPLE Thin targets consisted of high-purity (99.99%) indium C034300700007 metal evaporated to 4 mg/cm2 thickness onto high- C034300700008 purity 0.001-in. aluminum. Target stack also included C034300700009 a 0.001-in. aluminum monitor and several thin aluminumC034300700010 foils. Over-all target thickness about 20-25 mg/cm2. C034300700011 DECAY-DATA (49-IN-115-M,4.5HR,DG,335.,0.48) C034300700012 HISTORY (20111118A) SD: SF1 field in Reaction code changed. C034300700013 ENDBIB 11 0 C034300700014 NOCOMMON 0 0 C034300700015 DATA 3 4 C034300700016 EN DATA MONIT C034300700017 GEV MB MB C034300700018 30. 2.0 8.6 C034300700019 30. 1.8 8.6 C034300700020 2.9 2.1 9.1 C034300700021 2.9 2.0 9.1 C034300700022 ENDDATA 6 0 C034300700023 ENDSUBENT 22 0 C034300799999 SUBENT C0343008 20111118 C113C034300800001 BIB 4 13 C034300800002 REACTION (49-IN-115(P,X)48-CD-115,,SIG) C034300800003 Note: Authors describe reaction as C034300800004 In-115(p,pion(+)+p)Cd-115 C034300800005 The cross section for the formation of Cd-115 has C034300800006 been corrected for the isotopic abundance of C034300800007 In-115(0.957) C034300800008 SAMPLE Thin targets consisted of high-purity (99.99%) indium C034300800009 metal evaporated to 4 mg/cm2 thickness onto high- C034300800010 purity 0.001-in. aluminum. Target stack also included C034300800011 a 0.001-in. aluminum monitor and several thin aluminumC034300800012 foils. Over-all target thickness about 20-25 mg/cm2. C034300800013 DECAY-DATA (48-CD-115-G,53.HR,B-) C034300800014 HISTORY (20111118A) SD: SF1 field in Reaction code changed. C034300800015 ENDBIB 13 0 C034300800016 NOCOMMON 0 0 C034300800017 DATA 3 4 C034300800018 EN DATA MONIT C034300800019 GEV MB MB C034300800020 30. 0.028 8.6 C034300800021 30. 0.024 8.6 C034300800022 2.9 0.059 9.1 C034300800023 2.9 0.055 9.1 C034300800024 ENDDATA 6 0 C034300800025 ENDSUBENT 24 0 C034300899999 SUBENT C0343009 20111118 C113C034300900001 BIB 4 13 C034300900002 REACTION (49-IN-115(P,X)48-CD-115-M,,SIG) C034300900003 Note: Authors describe reaction as C034300900004 In-115(p,pion(+)+p)Cd-115m C034300900005 The cross section for the formation of Cd-115 has C034300900006 been corrected for the isotopic abundance of C034300900007 In-115(0.957) C034300900008 SAMPLE Thin targets consisted of high-purity (99.99%) indium C034300900009 metal evaporated to 4 mg/cm2 thickness onto high- C034300900010 purity 0.001-in. aluminum. Target stack also included C034300900011 a 0.001-in. aluminum monitor and several thin aluminumC034300900012 foils. Over-all target thickness about 20-25 mg/cm2. C034300900013 DECAY-DATA (48-CD-115-M,43.D,B-,,1.0) C034300900014 HISTORY (20111118A) SD: SF1,SF3 field in Reaction code changed.C034300900015 ENDBIB 13 0 C034300900016 NOCOMMON 0 0 C034300900017 DATA 3 4 C034300900018 EN DATA MONIT C034300900019 GEV MB MB C034300900020 30. 0.18 8.6 C034300900021 30. 0.14 8.6 C034300900022 2.9 0.18 9.1 C034300900023 2.9 0.14 9.1 C034300900024 ENDDATA 6 0 C034300900025 ENDSUBENT 24 0 C034300999999 SUBENT C0343010 20111118 C113C034301000001 BIB 5 12 C034301000002 REACTION (49-IN-115(P,X)48-CD-115,,SIG) C034301000003 Note: Authors describe reaction as C034301000004 In-115(p,pion(+)+p)Cd-115 C034301000005 The cross section for the formation of Cd-115 has C034301000006 been corrected for the isotopic abundance of C034301000007 In-115(0.957) C034301000008 DECAY-DATA (48-CD-115-G,53.HR,B-) C034301000009 (48-CD-115-M,43.D,B-,,1.0) C034301000010 ANALYSIS Sum of cross sections for ground and metastable states.C034301000011 STATUS (DEP,C0343027) C034301000012 (DEP,C0343028) C034301000013 HISTORY (20111118A) SD: SF1 field in Reaction code changed. C034301000014 ENDBIB 12 0 C034301000015 NOCOMMON 0 0 C034301000016 DATA 3 2 C034301000017 EN DATA MONIT C034301000018 GEV MB MB C034301000019 30. 0.12 8.6 C034301000020 2.9 0.18 9.1 C034301000021 ENDDATA 4 0 C034301000022 ENDSUBENT 21 0 C034301099999 SUBENT C0343011 20111118 C113C034301100001 BIB 4 11 C034301100002 REACTION (49-IN-115(P,X)47-AG-115-G,,SIG) C034301100003 Note: Authors describe reaction as C034301100004 In-115(p,2pion(+)+p)Ag-115g C034301100005 The cross section for the formation of Cd-115 has C034301100006 been corrected for the isotopic abundance of C034301100007 In-115(0.957) C034301100008 SAMPLE Assembly included high-purity indium foils with a C034301100009 thickness of about 15 mg/cm2, and a number of 0.001 C034301100010 or 0.003-in. thick aluminum foils. C034301100011 DECAY-DATA (47-AG-115-G,21.MIN,B-,,0.91) C034301100012 HISTORY (20111118A) SD: SF1 field in Reaction code changed. C034301100013 ENDBIB 11 0 C034301100014 NOCOMMON 0 0 C034301100015 DATA 3 2 C034301100016 EN DATA-MAX MONIT C034301100017 GEV MB MB C034301100018 30. 0.0003 8.6 C034301100019 2.9 0.006 9.1 C034301100020 ENDDATA 4 0 C034301100021 ENDSUBENT 20 0 C034301199999 SUBENT C0343013 20111118 C113C034301300001 BIB 3 5 C034301300002 REACTION (49-IN-0(P,X)49-IN-109,,SIG) C034301300003 SAMPLE Assembly included high-purity indium foils with a C034301300004 thickness of about 15 mg/cm2, and a number of 0.001 C034301300005 or 0.003-in. thick aluminum foils. C034301300006 DECAY-DATA (49-IN-109-G,4.3HR,DG,205.,0.70) C034301300007 ENDBIB 5 0 C034301300008 NOCOMMON 0 0 C034301300009 DATA 3 2 C034301300010 EN DATA MONIT C034301300011 GEV MB MB C034301300012 30. 7.7 8.6 C034301300013 2.9 7.9 9.1 C034301300014 ENDDATA 4 0 C034301300015 ENDSUBENT 14 0 C034301399999 SUBENT C0343014 20111118 C113C034301400001 BIB 3 5 C034301400002 REACTION (49-IN-0(P,X)49-IN-110-M,,SIG) C034301400003 SAMPLE Assembly included high-purity indium foils with a C034301400004 thickness of about 15 mg/cm2, and a number of 0.001 C034301400005 or 0.003-in. thick aluminum foils. C034301400006 DECAY-DATA (49-IN-110-G,4.9HR,DG,660.,1.0) C034301400007 ENDBIB 5 0 C034301400008 NOCOMMON 0 0 C034301400009 DATA 3 2 C034301400010 EN DATA MONIT C034301400011 GEV MB MB C034301400012 30. 9.5 8.6 C034301400013 2.9 9.1 9.1 C034301400014 ENDDATA 4 0 C034301400015 ENDSUBENT 14 0 C034301499999 SUBENT C0343015 20111118 C113C034301500001 BIB 3 5 C034301500002 REACTION (49-IN-0(P,X)49-IN-111,,SIG) C034301500003 SAMPLE Assembly included high-purity indium foils with a C034301500004 thickness of about 15 mg/cm2, and a number of 0.001 C034301500005 or 0.003-in. thick aluminum foils. C034301500006 DECAY-DATA (49-IN-111-G,2.84D,DG,172.,0.86,DG,247.,0.94) C034301500007 ENDBIB 5 0 C034301500008 NOCOMMON 0 0 C034301500009 DATA 3 2 C034301500010 EN DATA MONIT C034301500011 GEV MB MB C034301500012 30. 13.7 8.6 C034301500013 2.9 13.4 9.1 C034301500014 ENDDATA 4 0 C034301500015 ENDSUBENT 14 0 C034301599999 SUBENT C0343016 20111118 C113C034301600001 BIB 3 5 C034301600002 REACTION (49-IN-0(P,X)49-IN-113-M,,SIG) C034301600003 SAMPLE Assembly included high-purity indium foils with a C034301600004 thickness of about 15 mg/cm2, and a number of 0.001 C034301600005 or 0.003-in. thick aluminum foils. C034301600006 DECAY-DATA (49-IN-113-M,104.MIN,DG,393.,0.65) C034301600007 ENDBIB 5 0 C034301600008 NOCOMMON 0 0 C034301600009 DATA 3 2 C034301600010 EN DATA MONIT C034301600011 GEV MB MB C034301600012 30. 2.8 8.6 C034301600013 2.9 4.0 9.1 C034301600014 ENDDATA 4 0 C034301600015 ENDSUBENT 14 0 C034301699999 SUBENT C0343017 20111118 C113C034301700001 BIB 4 9 C034301700002 REACTION (49-IN-115(P,X)49-IN-114-M,,SIG) C034301700003 The cross section for the formation of In-114m has C034301700004 been corrected for the isotopic abundance of C034301700005 In-115(0.957) C034301700006 SAMPLE Assembly included high-purity indium foils with a C034301700007 thickness of about 15 mg/cm2, and a number of 0.001 C034301700008 or 0.003-in. thick aluminum foils. C034301700009 DECAY-DATA (49-IN-114-M,49.D,DG,191.,0.18) C034301700010 HISTORY (20111118A) SD: SF1,SF3 fields in Reaction code changedC034301700011 ENDBIB 9 0 C034301700012 NOCOMMON 0 0 C034301700013 DATA 3 2 C034301700014 EN DATA MONIT C034301700015 GEV MB MB C034301700016 30. 42. 8.6 C034301700017 2.9 41. 9.1 C034301700018 ENDDATA 4 0 C034301700019 ENDSUBENT 18 0 C034301799999 SUBENT C0343018 20111118 C113C034301800001 BIB 4 9 C034301800002 REACTION (49-IN-115(P,INL)49-IN-115-M,,SIG) C034301800003 The cross section for the formation of In-115m has C034301800004 been corrected for the isotopic abundance of C034301800005 In-115(0.957) C034301800006 SAMPLE Assembly included high-purity indium foils with a C034301800007 thickness of about 15 mg/cm2, and a number of 0.001 C034301800008 or 0.003-in. thick aluminum foils. C034301800009 DECAY-DATA (49-IN-115-M,4.5HR,DG,335.,0.48) C034301800010 HISTORY (20111118A) SD: SF1,SF3 fields in Reaction code changedC034301800011 ENDBIB 9 0 C034301800012 NOCOMMON 0 0 C034301800013 DATA 3 2 C034301800014 EN DATA MONIT C034301800015 GEV MB MB C034301800016 30. 2.2 8.6 C034301800017 2.9 2.5 9.1 C034301800018 ENDDATA 4 0 C034301800019 ENDSUBENT 18 0 C034301899999 SUBENT C0343019 20111118 C113C034301900001 BIB 4 11 C034301900002 REACTION (49-IN-115(P,X)48-CD-115-G,,SIG) C034301900003 Note: Authors describe reaction as C034301900004 In-115(p,pion(+)+p)Cd-115g C034301900005 The cross section for the formation of Cd-115 has C034301900006 been corrected for the isotopic abundance of C034301900007 In-115(0.957) C034301900008 SAMPLE Assembly included high-purity indium foils with a C034301900009 thickness of about 15 mg/cm2, and a number of 0.001 C034301900010 or 0.003-in. thick aluminum foils. C034301900011 DECAY-DATA (48-CD-115-G,53.HR,B-) C034301900012 HISTORY (20111118A) SD: SF1 field in Reaction code changed. C034301900013 ENDBIB 11 0 C034301900014 NOCOMMON 0 0 C034301900015 DATA 3 2 C034301900016 EN DATA MONIT C034301900017 GEV MB MB C034301900018 30. 0.030 8.6 C034301900019 2.9 0.079 9.1 C034301900020 ENDDATA 4 0 C034301900021 ENDSUBENT 20 0 C034301999999 SUBENT C0343020 20111118 C113C034302000001 BIB 4 11 C034302000002 REACTION (49-IN-115(P,X)48-CD-115-M,,SIG) C034302000003 Note: Authors describe reaction as C034302000004 In-115(p,pion(+)+p)Cd-115m C034302000005 The cross section for the formation of Cd-115 has C034302000006 been corrected for the isotopic abundance of C034302000007 In-115(0.957) C034302000008 SAMPLE Assembly included high-purity indium foils with a C034302000009 thickness of about 15 mg/cm2, and a number of 0.001 C034302000010 or 0.003-in. thick aluminum foils. C034302000011 DECAY-DATA (48-CD-115-M,43.D,B-,,1.0) C034302000012 HISTORY (20111118A) SD: SF3 field in Reaction code changed. C034302000013 ENDBIB 11 0 C034302000014 NOCOMMON 0 0 C034302000015 DATA 3 2 C034302000016 EN DATA MONIT C034302000017 GEV MB MB C034302000018 30. 0.23 8.6 C034302000019 2.9 0.22 9.1 C034302000020 ENDDATA 4 0 C034302000021 ENDSUBENT 20 0 C034302099999 SUBENT C0343021 20111118 C113C034302100001 BIB 4 5 C034302100002 REACTION (49-IN-0(P,X)49-IN-109,,SIG) C034302100003 DECAY-DATA (49-IN-109-G,4.3HR,DG,205.,0.70) C034302100004 ANALYSIS Average of thin and target thick experiments. C034302100005 STATUS (DEP,C0343002) C034302100006 (DEP,C0343013) C034302100007 ENDBIB 5 0 C034302100008 NOCOMMON 0 0 C034302100009 DATA 3 2 C034302100010 EN DATA MONIT C034302100011 GEV MB MB C034302100012 30. 7.4 8.6 C034302100013 2.9 7.9 9.1 C034302100014 ENDDATA 4 0 C034302100015 ENDSUBENT 14 0 C034302199999 SUBENT C0343022 20111118 C113C034302200001 BIB 4 5 C034302200002 REACTION (49-IN-0(P,X)49-IN-110-M,,SIG) C034302200003 DECAY-DATA (49-IN-110-G,4.9HR,DG,660.,1.0) C034302200004 ANALYSIS Average of thin and target thick experiments. C034302200005 STATUS (DEP,C0343003) C034302200006 (DEP,C0343014) C034302200007 ENDBIB 5 0 C034302200008 NOCOMMON 0 0 C034302200009 DATA 3 2 C034302200010 EN DATA MONIT C034302200011 GEV MB MB C034302200012 30. 9.5 8.6 C034302200013 2.9 8.8 9.1 C034302200014 ENDDATA 4 0 C034302200015 ENDSUBENT 14 0 C034302299999 SUBENT C0343023 20111118 C113C034302300001 BIB 4 5 C034302300002 REACTION (49-IN-0(P,X)49-IN-111,,SIG) C034302300003 DECAY-DATA (49-IN-111-G,2.84D,DG,172.,0.86,DG,247.,0.94) C034302300004 ANALYSIS Average of thin and target thick experiments. C034302300005 STATUS (DEP,C0343004) C034302300006 (DEP,C0343015) C034302300007 ENDBIB 5 0 C034302300008 NOCOMMON 0 0 C034302300009 DATA 3 2 C034302300010 EN DATA MONIT C034302300011 GEV MB MB C034302300012 30. 12.9 8.6 C034302300013 2.9 14.4 9.1 C034302300014 ENDDATA 4 0 C034302300015 ENDSUBENT 14 0 C034302399999 SUBENT C0343024 20111118 C113C034302400001 BIB 4 5 C034302400002 REACTION (49-IN-0(P,X)49-IN-113-M,,SIG) C034302400003 DECAY-DATA (49-IN-113-M,104.MIN,DG,393.,0.65) C034302400004 ANALYSIS Average of thin and target thick experiments. C034302400005 STATUS (DEP,C0343005) C034302400006 (DEP,C0343016) C034302400007 ENDBIB 5 0 C034302400008 NOCOMMON 0 0 C034302400009 DATA 3 2 C034302400010 EN DATA MONIT C034302400011 GEV MB MB C034302400012 30. 3.3 8.6 C034302400013 2.9 3.8 9.1 C034302400014 ENDDATA 4 0 C034302400015 ENDSUBENT 14 0 C034302499999 SUBENT C0343025 20111118 C113C034302500001 BIB 5 6 C034302500002 REACTION (49-IN-115(P,X)49-IN-114-M,,SIG) C034302500003 DECAY-DATA (49-IN-114-M,49.D,DG,191.,0.18) C034302500004 ANALYSIS Average of thin and target thick experiments. C034302500005 STATUS (DEP,C0343006) C034302500006 (DEP,C0343017) C034302500007 HISTORY (20111118A) SD: SF1,SF3 field in Reaction code changed.C034302500008 ENDBIB 6 0 C034302500009 NOCOMMON 0 0 C034302500010 DATA 3 2 C034302500011 EN DATA MONIT C034302500012 GEV MB MB C034302500013 30. 40. 8.6 C034302500014 2.9 40. 9.1 C034302500015 ENDDATA 4 0 C034302500016 ENDSUBENT 15 0 C034302599999 SUBENT C0343026 20111118 C113C034302600001 BIB 5 6 C034302600002 REACTION (49-IN-115(P,INL)49-IN-115-M,,SIG) C034302600003 DECAY-DATA (49-IN-115-M,4.5HR,DG,335.,0.48) C034302600004 ANALYSIS Average of thin and target thick experiments. C034302600005 STATUS (DEP,C0343007) C034302600006 (DEP,C0343018) C034302600007 HISTORY (20111118A) SD: SF1,SF3 field in Reaction code changed.C034302600008 ENDBIB 6 0 C034302600009 NOCOMMON 0 0 C034302600010 DATA 3 2 C034302600011 EN DATA MONIT C034302600012 GEV MB MB C034302600013 30. 1.7 8.6 C034302600014 2.9 1.9 9.1 C034302600015 ENDDATA 4 0 C034302600016 ENDSUBENT 15 0 C034302699999 SUBENT C0343027 20111118 C113C034302700001 BIB 5 8 C034302700002 REACTION (49-IN-115(P,X)48-CD-115-G,,SIG) C034302700003 Note: Authors describe reaction as C034302700004 In-115(p,pion(+)+p)Cd-115g C034302700005 DECAY-DATA (48-CD-115-G,53.HR,B-) C034302700006 ANALYSIS Average of thin and target thick experiments. C034302700007 STATUS (DEP,C0343008) C034302700008 (DEP,C0343019) C034302700009 HISTORY (20111118A) SD: SF1,SF3 field in Reaction code changed.C034302700010 ENDBIB 8 0 C034302700011 NOCOMMON 0 0 C034302700012 DATA 3 2 C034302700013 EN DATA MONIT C034302700014 GEV MB MB C034302700015 30. 0.023 8.6 C034302700016 2.9 0.048 9.1 C034302700017 ENDDATA 4 0 C034302700018 ENDSUBENT 17 0 C034302799999 SUBENT C0343028 20111118 C113C034302800001 BIB 5 8 C034302800002 REACTION (49-IN-115(P,PIP+P)48-CD-115-M,,SIG) C034302800003 Note: Authors describe reaction as C034302800004 In-115(p,pion(+)+p)Cd-115m C034302800005 DECAY-DATA (48-CD-115-M,43.D,B-,,1.0) C034302800006 ANALYSIS Average of thin and target thick experiments. C034302800007 STATUS (DEP,C0343009) C034302800008 (DEP,C0343020) C034302800009 HISTORY (20111118A) SD: SF1,SF3 field in Reaction code changed.C034302800010 ENDBIB 8 0 C034302800011 NOCOMMON 0 0 C034302800012 DATA 3 2 C034302800013 EN DATA MONIT C034302800014 GEV MB MB C034302800015 30. 0.10 8.6 C034302800016 2.9 0.13 9.1 C034302800017 ENDDATA 4 0 C034302800018 ENDSUBENT 17 0 C034302899999 ENDENTRY 27 0 C034399999999