ENTRY C0507 19981224 0000C050700000001 SUBENT C0507001 19981224 0000C050700100001 BIB 8 21 C050700100002 INSTITUTE (1USAHRV,1USASJS,1USALRL,1USAUAZ,1USADAV,1CANTMF, C050700100003 1USALAS) C050700100004 REFERENCE (J,NIM/B,123,324,1997) C050700100005 (J,LPS,23,1305,1992) for 10Be production in Si sample. C050700100006 AUTHOR (J.M.SISTERSON,K.KIM,A.BEVERDING,P.A.J.ENGLERT, C050700100007 M.CAFFEE,A.J.T.JULL,D.J.DONOHUE,L.MCHARGUE,C.CASTANEDA,C050700100008 J.VINCENT,R.C.REEDY) C050700100009 TITLE Measurement of production cross sections of 10Be and C050700100010 26Al from elements found in lunar rocks. C050700100011 MONITOR Monitor chamber calibrated using Faraday cup. C050700100012 27Al(p,x)22Na and 27Al(p,x)24Na used as additional C050700100013 dosimetric check. C050700100014 ERR-ANALYS (DATA-ERR) Includes uncertainties due to: C050700100015 . number of atoms.cm2 in target (2%), C050700100016 . number of protons through to target (5%). C050700100017 Uncertainty due to reciol losses/gains in target foil C050700100018 is not included (estimated small from adjunct C050700100019 experiments). C050700100020 STATUS Data taken from article. C050700100021 (APRVD) Approved by J. Sisterson, 1998/12/24. C050700100022 HISTORY (19981029C) C050700100023 ENDBIB 21 0 C050700100024 NOCOMMON 0 0 C050700100025 ENDSUBENT 24 0 C050700199999 SUBENT C0507002 19981224 0000C050700200001 BIB 4 7 C050700200002 REACTION (14-SI-0(P,X)4-BE-7,,SIG) C050700200003 FACILITY (CYCLO,1USADAV) C050700200004 SAMPLE Thin silicon targets 0.0754-0.076 cm thick. C050700200005 METHOD (AMS) Analyzed using LLNL Accelerator Mass C050700200006 Spectrometer facility. C050700200007 (CHSEP) Chemical separations made at San Jose State C050700200008 University. C050700200009 ENDBIB 7 0 C050700200010 NOCOMMON 0 0 C050700200011 DATA 3 4 C050700200012 EN DATA DATA-ERR C050700200013 MEV MB MB C050700200014 52.4 0.5 0.105 C050700200015 65.2 0.88 0.203 C050700200016 66.9 0.81 0.16 C050700200017 67.4 0.66 0.24 C050700200018 ENDDATA 6 0 C050700200019 ENDSUBENT 18 0 C050700299999 SUBENT C0507003 19981224 0000C050700300001 BIB 4 7 C050700300002 REACTION (14-SI-0(P,X)4-BE-7,,SIG) C050700300003 FACILITY (CYCLO,1USAHRV) C050700300004 SAMPLE Thin silicon targets 0.0754-0.076 cm thick. C050700300005 METHOD (AMS) Analyzed using LLNL Accelerator Mass C050700300006 Spectrometer facility. C050700300007 (CHSEP) Chemical separations made at San Jose State C050700300008 University. C050700300009 ENDBIB 7 0 C050700300010 NOCOMMON 0 0 C050700300011 DATA 4 9 C050700300012 EN EN-RSL DATA DATA-ERR C050700300013 MEV MEV MB MB C050700300014 56.5 4.0 0.31 0.15 C050700300015 61.7 4.0 0.41 0.16 C050700300016 77.2 3.5 0.75 0.13 C050700300017 87.4 3.0 0.84 0.14 C050700300018 97.0 3.0 0.87 0.16 C050700300019 127.0 2.0 1.11 0.34 C050700300020 128.0 2.0 1.19 0.15 C050700300021 148.2 2.0 1.3 0.15 C050700300022 157.3 1.0 1.41 0.15 C050700300023 ENDDATA 11 0 C050700300024 ENDSUBENT 23 0 C050700399999 SUBENT C0507004 19981224 0000C050700400001 BIB 4 7 C050700400002 REACTION (14-SI-0(P,X)4-BE-7,,SIG) C050700400003 FACILITY (MESON,1CANTMF) C050700400004 SAMPLE Thin silicon targets 0.0754-0.076 cm thick. C050700400005 METHOD (AMS) Analyzed using LLNL Accelerator Mass C050700400006 Spectrometer facility. C050700400007 (CHSEP) Chemical separations made at San Jose State C050700400008 University. C050700400009 ENDBIB 7 0 C050700400010 NOCOMMON 0 0 C050700400011 DATA 3 4 C050700400012 EN DATA DATA-ERR C050700400013 MEV MB MB C050700400014 200. 2.9 0.26 C050700400015 300. 3.9 0.3 C050700400016 400. 4.25 0.32 C050700400017 500. 5.7 0.43 C050700400018 ENDDATA 6 0 C050700400019 ENDSUBENT 18 0 C050700499999 SUBENT C0507005 19981224 0000C050700500001 BIB 6 10 C050700500002 REACTION (14-SI-0(P,X)4-BE-10,,SIG) C050700500003 FACILITY (CYCLO,1USADAV) C050700500004 SAMPLE Thin silicon targets 0.0754-0.076 cm thick. C050700500005 DETECTOR dE/dx detector with Havar foil as entrance window to C050700500006 reduce boron background. C050700500007 METHOD (AMS) Analyzed using LLNL Accelerator Mass C050700500008 Spectrometer facility. C050700500009 (CHSEP) Chemical separations made at San Jose State C050700500010 University. C050700500011 CORRECTION Corrected for boron reactions in Havar entrance window.C050700500012 ENDBIB 10 0 C050700500013 NOCOMMON 0 0 C050700500014 DATA 3 3 C050700500015 EN DATA DATA-ERR C050700500016 MEV MB MB C050700500017 50.2 0.0009 0.0002 C050700500018 65.6 0.005 0.0005 C050700500019 66.9 0.0097 0.0012 C050700500020 ENDDATA 5 0 C050700500021 ENDSUBENT 20 0 C050700599999 SUBENT C0507006 19981224 0000C050700600001 BIB 6 7 C050700600002 REACTION (14-SI-0(P,X)4-BE-10,,SIG) C050700600003 FACILITY (CYCLO,1USAHRV) C050700600004 SAMPLE Thin silicon targets 0.0754-0.076 cm thick. C050700600005 DETECTOR dE/dx detector with Havar foil as entrance window to C050700600006 reduce boron background. C050700600007 METHOD (AMS,CHSEP) Analyzed at U. of Arizona C050700600008 CORRECTION Corrected for boron reactions in Havar entrance window.C050700600009 ENDBIB 7 0 C050700600010 NOCOMMON 0 0 C050700600011 DATA 4 9 C050700600012 EN EN-RSL DATA DATA-ERR C050700600013 MEV MEV MB MB C050700600014 56.5 4.0 0.0024 0.0009 C050700600015 61.7 4.0 0.0065 0.0009 C050700600016 77.2 3.5 0.011 0.0013 C050700600017 87.4 3.0 0.019 0.0019 C050700600018 97.0 3.0 0.023 0.0026 C050700600019 127.0 2.0 0.048 0.0038 C050700600020 128.0 2.0 0.045 0.0044 C050700600021 148.2 2.0 0.062 0.005 C050700600022 157.3 1.0 0.066 0.0064 C050700600023 ENDDATA 11 0 C050700600024 ENDSUBENT 23 0 C050700699999 SUBENT C0507007 19981224 0000C050700700001 BIB 6 10 C050700700002 REACTION (14-SI-0(P,X)4-BE-10,,SIG) C050700700003 FACILITY (MESON,1CANTMF) C050700700004 SAMPLE Thin silicon targets 0.0754-0.076 cm thick. C050700700005 DETECTOR dE/dx detector with Havar foil as entrance window to C050700700006 reduce boron background. C050700700007 METHOD (AMS) Analyzed using LLNL Accelerator Mass C050700700008 Spectrometer facility. C050700700009 (CHSEP) Chemical separations made at San Jose State C050700700010 University. C050700700011 CORRECTION Corrected for boron reactions in Havar entrance window.C050700700012 ENDBIB 10 0 C050700700013 NOCOMMON 0 0 C050700700014 DATA 3 4 C050700700015 EN DATA DATA-ERR C050700700016 MEV MB MB C050700700017 200. 0.114 0.0073 C050700700018 300. 0.262 0.0159 C050700700019 400. 0.397 0.029 C050700700020 500. 0.554 0.033 C050700700021 ENDDATA 6 0 C050700700022 ENDSUBENT 21 0 C050700799999 SUBENT C0507008 19981224 0000C050700800001 BIB 4 7 C050700800002 REACTION (14-SI-0(P,X)11-NA-22,,SIG) C050700800003 FACILITY (CYCLO,1USADAV) C050700800004 SAMPLE Thin silicon targets 0.0754-0.076 cm thick. C050700800005 METHOD (AMS) Analyzed using LLNL Accelerator Mass C050700800006 Spectrometer facility. C050700800007 (CHSEP) Chemical separations made at San Jose State C050700800008 University. C050700800009 ENDBIB 7 0 C050700800010 NOCOMMON 0 0 C050700800011 DATA 3 6 C050700800012 EN DATA DATA-ERR C050700800013 MEV MB MB C050700800014 41.0 1.16 0.12 C050700800015 50.2 11.6 1.09 C050700800016 58.7 22.0 2.09 C050700800017 59.0 22.4 2.08 C050700800018 65.6 25.5 2.4 C050700800019 66.9 19.9 1.82 C050700800020 ENDDATA 8 0 C050700800021 ENDSUBENT 20 0 C050700899999 SUBENT C0507009 19981224 0000C050700900001 BIB 4 7 C050700900002 REACTION (14-SI-0(P,X)11-NA-22,,SIG) C050700900003 FACILITY (CYCLO,1USAHRV) C050700900004 SAMPLE Thin silicon targets 0.0754-0.076 cm thick. C050700900005 METHOD (AMS) Analyzed using LLNL Accelerator Mass C050700900006 Spectrometer facility. C050700900007 (CHSEP) Chemical separations made at San Jose State C050700900008 University. C050700900009 ENDBIB 7 0 C050700900010 NOCOMMON 0 0 C050700900011 DATA 4 8 C050700900012 EN EN-RSL DATA DATA-ERR C050700900013 MEV MEV MB MB C050700900014 56.5 4.0 16.8 1.54 C050700900015 61.7 4.0 20.0 1.84 C050700900016 87.4 3.0 18.1 1.63 C050700900017 97.0 3.0 16.8 1.53 C050700900018 127.5 2.0 17.9 0.99 C050700900019 128.0 2.0 16.5 1.49 C050700900020 148.2 2.0 16.1 1.46 C050700900021 157.3 1.0 16.1 1.45 C050700900022 ENDDATA 10 0 C050700900023 ENDSUBENT 22 0 C050700999999 SUBENT C0507010 19981224 0000C050701000001 BIB 4 7 C050701000002 REACTION (14-SI-0(P,X)11-NA-22,,SIG) C050701000003 FACILITY (MESON,1CANTMF) C050701000004 SAMPLE Thin silicon targets 0.0754-0.076 cm thick. C050701000005 METHOD (AMS) Analyzed using LLNL Accelerator Mass C050701000006 Spectrometer facility. C050701000007 (CHSEP) Chemical separations made at San Jose State C050701000008 University. C050701000009 ENDBIB 7 0 C050701000010 NOCOMMON 0 0 C050701000011 DATA 3 4 C050701000012 EN DATA DATA-ERR C050701000013 MEV MB MB C050701000014 200. 15.1 1.16 C050701000015 300. 17.5 1.31 C050701000016 400. 17.5 1.29 C050701000017 500. 17.7 1.31 C050701000018 ENDDATA 6 0 C050701000019 ENDSUBENT 18 0 C050701099999 SUBENT C0507011 19981224 0000C050701100001 BIB 5 8 C050701100002 REACTION (14-SI-0(P,X)13-AL-26,,SIG) C050701100003 FACILITY (CYCLO,1USADAV) C050701100004 SAMPLE Thin silicon targets 0.0754-0.076 cm thick. C050701100005 DETECTOR dE/dx detector. C050701100006 METHOD (AMS) Analyzed using LLNL Accelerator Mass C050701100007 Spectrometer facility. C050701100008 (CHSEP) Chemical separations made at San Jose State C050701100009 University. C050701100010 ENDBIB 8 0 C050701100011 NOCOMMON 0 0 C050701100012 DATA 3 5 C050701100013 EN DATA DATA-ERR C050701100014 MEV MB MB C050701100015 29.8 5.99 0.38 C050701100016 44.5 67.0 3.95 C050701100017 50.2 70.2 4.05 C050701100018 65.6 50.5 2.87 C050701100019 66.9 47.0 3.57 C050701100020 ENDDATA 7 0 C050701100021 ENDSUBENT 20 0 C050701199999 SUBENT C0507012 19981224 0000C050701200001 BIB 5 8 C050701200002 REACTION (14-SI-0(P,X)13-AL-26,,SIG) C050701200003 FACILITY (CYCLO,1USAHRV) C050701200004 SAMPLE Thin silicon targets 0.0754-0.076 cm thick. C050701200005 DETECTOR dE/dx detector. C050701200006 METHOD (AMS) Analyzed using LLNL Accelerator Mass C050701200007 Spectrometer facility. C050701200008 (CHSEP) Chemical separations made at San Jose State C050701200009 University. C050701200010 ENDBIB 8 0 C050701200011 NOCOMMON 0 0 C050701200012 DATA 4 9 C050701200013 EN EN-RSL DATA DATA-ERR C050701200014 MEV MEV MB MB C050701200015 56.5 4.0 51.3 5.04 C050701200016 61.7 4.0 53.0 4.04 C050701200017 77.2 3.5 43.9 3.36 C050701200018 87.4 3.0 38.8 3.01 C050701200019 97.0 3.0 36.4 2.76 C050701200020 128.0 2.0 34.6 2.64 C050701200021 128.7 2.0 32.3 1.88 C050701200022 148.2 2.0 29.1 2.22 C050701200023 157.3 1.0 32.6 2.54 C050701200024 ENDDATA 11 0 C050701200025 ENDSUBENT 24 0 C050701299999 SUBENT C0507013 19981224 0000C050701300001 BIB 5 8 C050701300002 REACTION (14-SI-0(P,X)13-AL-26,,SIG) C050701300003 FACILITY (MESON,1CANTMF) C050701300004 SAMPLE Thin silicon targets 0.0754-0.076 cm thick. C050701300005 DETECTOR dE/dx detector. C050701300006 METHOD (AMS) Analyzed using LLNL Accelerator Mass C050701300007 Spectrometer facility. C050701300008 (CHSEP) Chemical separations made at San Jose State C050701300009 University. C050701300010 ENDBIB 8 0 C050701300011 NOCOMMON 0 0 C050701300012 DATA 3 4 C050701300013 EN DATA DATA-ERR C050701300014 MEV MB MB C050701300015 200. 24.8 1.44 C050701300016 300. 22.1 1.3 C050701300017 400. 20.4 1.18 C050701300018 500. 18.7 1.09 C050701300019 ENDDATA 6 0 C050701300020 ENDSUBENT 19 0 C050701399999 SUBENT C0507014 19981224 0000C050701400001 BIB 4 7 C050701400002 REACTION (8-O-16(P,X)4-BE-7,,SIG) C050701400003 FACILITY (CYCLO,1USAHRV) C050701400004 SAMPLE Thin siO2 targets 0.0508-0.056 cm thick. C050701400005 METHOD (AMS) Analyzed using LLNL Accelerator Mass C050701400006 Spectrometer facility. C050701400007 (CHSEP) Chemical separations made at San Jose State C050701400008 University. C050701400009 ENDBIB 7 0 C050701400010 NOCOMMON 0 0 C050701400011 DATA 4 10 C050701400012 EN EN-RSL DATA DATA-ERR C050701400013 MEV MEV MB MB C050701400014 59.8 4.0 8.44 0.83 C050701400015 64.8 4.0 7.68 0.75 C050701400016 69.9 3.5 7.69 0.75 C050701400017 79.9 3.5 7.66 0.73 C050701400018 89.9 3.0 7.25 0.68 C050701400019 99.9 3.0 7.57 0.74 C050701400020 129.9 2.0 7.3 0.69 C050701400021 129.9 2.0 6.27 0.56 C050701400022 149.9 2.0 7.11 0.66 C050701400023 158.9 1.0 6.82 0.63 C050701400024 ENDDATA 12 0 C050701400025 ENDSUBENT 24 0 C050701499999 SUBENT C0507015 19981224 0000C050701500001 BIB 4 7 C050701500002 REACTION (8-O-16(P,X)4-BE-7,,SIG) C050701500003 FACILITY (MESON,1CANTMF) C050701500004 SAMPLE Thin siO2 targets 0.0508-0.056 cm thick. C050701500005 METHOD (AMS) Analyzed using LLNL Accelerator Mass C050701500006 Spectrometer facility. C050701500007 (CHSEP) Chemical separations made at San Jose State C050701500008 University. C050701500009 ENDBIB 7 0 C050701500010 NOCOMMON 0 0 C050701500011 DATA 3 4 C050701500012 EN DATA DATA-ERR C050701500013 MEV MB MB C050701500014 200. 10.3 0.77 C050701500015 300. 11.1 0.85 C050701500016 400. 10.3 0.77 C050701500017 500. 10.2 0.77 C050701500018 ENDDATA 6 0 C050701500019 ENDSUBENT 18 0 C050701599999 SUBENT C0507016 19981224 0000C050701600001 BIB 6 10 C050701600002 REACTION (8-O-16(P,X)4-BE-10,,SIG) C050701600003 FACILITY (CYCLO,1USADAV) C050701600004 SAMPLE Thin siO2 targets 0.0508-0.056 cm thick. C050701600005 DETECTOR dE/dx detector with Havar foil as entrance window to C050701600006 reduce boron background. C050701600007 METHOD (AMS) Analyzed using LLNL Accelerator Mass C050701600008 Spectrometer facility. C050701600009 (CHSEP) Chemical separations made at San Jose State C050701600010 University. C050701600011 CORRECTION Corrected for boron reactions in Havar entrance window.C050701600012 ENDBIB 10 0 C050701600013 NOCOMMON 0 0 C050701600014 DATA 3 4 C050701600015 EN DATA DATA-ERR C050701600016 MEV MB MB C050701600017 30.9 0.0052 0.0004 C050701600018 41.8 0.0079 0.0008 C050701600019 49.9 0.038 0.0029 C050701600020 67.4 0.33 0.02 C050701600021 ENDDATA 6 0 C050701600022 ENDSUBENT 21 0 C050701699999 SUBENT C0507017 19981224 0000C050701700001 BIB 6 10 C050701700002 REACTION (8-O-16(P,X)4-BE-10,,SIG) C050701700003 FACILITY (CYCLO,1USAHRV) C050701700004 SAMPLE Thin siO2 targets 0.0508-0.056 cm thick. C050701700005 DETECTOR dE/dx detector with Havar foil as entrance window to C050701700006 reduce boron background. C050701700007 METHOD (AMS) Analyzed using LLNL Accelerator Mass C050701700008 Spectrometer facility. C050701700009 (CHSEP) Chemical separations made at San Jose State C050701700010 University. C050701700011 CORRECTION Corrected for boron reactions in Havar entrance window.C050701700012 ENDBIB 10 0 C050701700013 NOCOMMON 0 0 C050701700014 DATA 4 8 C050701700015 EN EN-RSL DATA DATA-ERR C050701700016 MEV MEV MB MB C050701700017 59.8 4.0 0.18 0.022 C050701700018 64.8 4.0 0.21 0.037 C050701700019 79.9 3.5 0.27 0.032 C050701700020 89.9 3.0 0.33 0.038 C050701700021 99.9 3.0 0.44 0.047 C050701700022 129.9 2.0 0.42 0.044 C050701700023 149.9 2.0 0.51 0.057 C050701700024 158.9 1.0 0.56 0.048 C050701700025 ENDDATA 10 0 C050701700026 ENDSUBENT 25 0 C050701799999 SUBENT C0507018 19981224 0000C050701800001 BIB 6 10 C050701800002 REACTION (8-O-16(P,X)4-BE-10,,SIG) C050701800003 FACILITY (MESON,1CANTMF) C050701800004 SAMPLE Thin siO2 targets 0.0508-0.056 cm thick. C050701800005 DETECTOR dE/dx detector with Havar foil as entrance window to C050701800006 reduce boron background. C050701800007 METHOD (AMS) Analyzed using LLNL Accelerator Mass C050701800008 Spectrometer facility. C050701800009 (CHSEP) Chemical separations made at San Jose State C050701800010 University. C050701800011 CORRECTION Corrected for boron reactions in Havar entrance window.C050701800012 ENDBIB 10 0 C050701800013 NOCOMMON 0 0 C050701800014 DATA 3 3 C050701800015 EN DATA DATA-ERR C050701800016 MEV MB MB C050701800017 200. 0.712 0.046 C050701800018 300. 0.952 0.058 C050701800019 400. 1.18 0.068 C050701800020 ENDDATA 5 0 C050701800021 ENDSUBENT 20 0 C050701899999 ENDENTRY 18 0 C050799999999