ENTRY C0758 20010119 0000C075800000001 SUBENT C0758001 20010119 0000C075800100001 BIB 10 14 C075800100002 INSTITUTE (1USALAS) C075800100003 REFERENCE (C,89ALBUQU,165,1989) C075800100004 AUTHOR (K.M.HUBBARD,J.A.MARTIN,R.E.MUENCHAUSEN,J.R.TESMER, C075800100005 M.NASTASI) C075800100006 TITLE High-energy helium backscattering for the compositionalC075800100007 analysis of thin-film oxide-superconductors C075800100008 FACILITY (ACCEL,1USALAS) 3 MV tandem accelerator. C075800100009 DETECTOR (SOLST) Silicon surface-barrier detector. C075800100010 MONITOR Target composition determined using beam energy of C075800100011 2.20 MeV. C075800100012 ERR-ANALYS (ERR-S) Statistical uncertainty given. C075800100013 STATUS Data taken from tables in reference. C075800100014 No reply from K.M. Hubbard to author proof. C075800100015 HISTORY (20001201C) VM C075800100016 ENDBIB 14 0 C075800100017 COMMON 1 3 C075800100018 ANG C075800100019 ADEG C075800100020 166. C075800100021 ENDCOMMON 3 0 C075800100022 ENDSUBENT 21 0 C075800199999 SUBENT C0758002 20001205 0000C075800200001 BIB 2 4 C075800200002 REACTION ((20-CA-0(A,EL)20-CA-0,,DA)/(56-BA-0(A,EL)56-BA-0,,DA))C075800200003 SAMPLE 1500 Angstrom thick layer of Ca and Ba in the ratio of C075800200004 Ca/Ba = 5.7, prepared by laser ablation onto a Sio2 C075800200005 substrate. C075800200006 ENDBIB 4 0 C075800200007 NOCOMMON 0 0 C075800200008 DATA 3 27 C075800200009 EN DATA ERR-S C075800200010 MEV NO-DIM NO-DIM C075800200011 2.20 0.125 C075800200012 2.60 0.124 0.002 C075800200013 2.70 0.126 0.002 C075800200014 3.00 0.126 0.002 C075800200015 3.25 0.123 0.002 C075800200016 3.50 0.126 0.001 C075800200017 3.75 0.126 0.002 C075800200018 4.00 0.124 0.002 C075800200019 4.25 0.125 0.002 C075800200020 4.50 0.123 0.002 C075800200021 4.75 0.124 0.002 C075800200022 5.00 0.122 0.002 C075800200023 5.25 0.123 0.002 C075800200024 5.50 0.122 0.002 C075800200025 5.75 0.118 0.002 C075800200026 6.00 0.114 0.002 C075800200027 6.25 0.110 0.002 C075800200028 6.50 0.124 0.002 C075800200029 6.75 0.152 0.002 C075800200030 7.00 0.114 0.002 C075800200031 7.25 0.264 0.004 C075800200032 7.50 0.153 0.002 C075800200033 7.75 0.152 0.002 C075800200034 8.00 0.188 0.003 C075800200035 8.25 0.114 0.002 C075800200036 8.50 0.128 0.002 C075800200037 8.80 0.158 0.002 C075800200038 ENDDATA 29 0 C075800200039 ENDSUBENT 38 0 C075800299999 SUBENT C0758003 20001205 0000C075800300001 BIB 2 4 C075800300002 REACTION ((22-TI-0(A,EL)22-TI-0,,DA)/(56-BA-0(A,EL)56-BA-0,,DA))C075800300003 SAMPLE 1500 Angstrom thick layer of Sr and Gd in the ratio of C075800300004 Sr/Gd = 3.3, evaporated onto Sio2 substrate. A 1000 C075800300005 Angstrom Ti layer was deposited as an overlayer. C075800300006 ENDBIB 4 0 C075800300007 NOCOMMON 0 0 C075800300008 DATA 3 26 C075800300009 EN DATA ERR-S C075800300010 MEV NO-DIM NO-DIM C075800300011 2.20 0.117 C075800300012 2.60 0.116 0.002 C075800300013 3.00 0.116 0.001 C075800300014 3.50 0.117 0.001 C075800300015 4.00 0.118 0.001 C075800300016 4.50 0.117 0.002 C075800300017 4.75 0.118 0.002 C075800300018 5.00 0.116 0.001 C075800300019 5.50 0.116 0.002 C075800300020 6.00 0.112 0.002 C075800300021 6.50 0.107 0.002 C075800300022 6.75 0.101 0.001 C075800300023 7.00 0.099 0.001 C075800300024 7.25 0.093 0.002 C075800300025 7.40 0.087 0.002 C075800300026 7.50 0.081 0.001 C075800300027 7.75 0.075 0.001 C075800300028 8.00 0.069 0.001 C075800300029 8.125 0.0455 0.006 C075800300030 8.25 0.0585 0.007 C075800300031 8.35 0.0586 0.007 C075800300032 8.40 0.0543 0.009 C075800300033 8.45 0.0446 0.006 C075800300034 8.50 0.0382 0.006 C075800300035 8.65 0.0412 0.007 C075800300036 8.80 0.0450 0.006 C075800300037 ENDDATA 28 0 C075800300038 ENDSUBENT 37 0 C075800399999 SUBENT C0758004 20001205 0000C075800400001 BIB 2 4 C075800400002 REACTION ((38-SR-0(A,EL)38-SR-0,,DA)/(64-GD-0(A,EL)64-GD-0,,DA))C075800400003 SAMPLE 1500 Angstrom thick layer of Sr and Gd in the ratio of C075800400004 Sr/Gd = 3.3, evaporated onto Sio2 substrate. A 1000 C075800400005 Angstrom Ti layer was deposited as an overlayer. C075800400006 ENDBIB 4 0 C075800400007 NOCOMMON 0 0 C075800400008 DATA 3 26 C075800400009 EN DATA ERR-S C075800400010 MEV NO-DIM NO-DIM C075800400011 2.20 0.351 C075800400012 2.60 0.347 0.005 C075800400013 3.00 0.350 0.004 C075800400014 3.50 0.353 0.004 C075800400015 4.00 0.354 0.004 C075800400016 4.50 0.350 0.004 C075800400017 4.75 0.353 0.004 C075800400018 5.00 0.351 0.004 C075800400019 5.50 0.344 0.004 C075800400020 6.00 0.351 0.005 C075800400021 6.50 0.350 0.005 C075800400022 6.75 0.348 0.005 C075800400023 7.00 0.350 0.004 C075800400024 7.25 0.350 0.004 C075800400025 7.40 0.345 0.004 C075800400026 7.50 0.352 0.004 C075800400027 7.75 0.355 0.004 C075800400028 8.00 0.352 0.004 C075800400029 8.125 0.346 0.004 C075800400030 8.25 0.346 0.004 C075800400031 8.35 0.352 0.004 C075800400032 8.40 0.347 0.004 C075800400033 8.45 0.345 0.004 C075800400034 8.50 0.350 0.004 C075800400035 8.65 0.347 0.004 C075800400036 8.80 0.355 0.004 C075800400037 ENDDATA 28 0 C075800400038 ENDSUBENT 37 0 C075800499999 ENDENTRY 4 0 C075899999999