ENTRY C0783 20010326 0000C078300000001 SUBENT C0783001 20010326 0000C078300100001 BIB 13 19 C078300100002 INSTITUTE (1CANMCM) C078300100003 REFERENCE (J,PR/C,33,1799,198606) C078300100004 AUTHOR (N.J.DAVIS,J.A.KUEHNER,A.J.TRUDEL,C.BAMBER) C078300100005 TITLE 0- state at low excitation energy in 26Al C078300100006 FACILITY (VDGT,1CANMCM) C078300100007 INC-SOURCE (LAMB). Beam polarization 0.66 - 0.76 (+-0.03). C078300100008 SAMPLE Silicon oxide target, enriched to 96% 28Si, on carbon C078300100009 backing. C078300100010 METHOD Polarization determined using quench-ratio method. C078300100011 DETECTOR (MAGSP,MWPC) Resistive-wire position-sensitive C078300100012 counter placed in focal plane of Enge split-pole C078300100013 magnetic spectrograph. C078300100014 CORRECTION Coorected for background. C078300100015 ERR-ANALYS (ERR-S) Statistical uncertainty given. C078300100016 Actual errors somewhat larger because of uncertainty C078300100017 in defining background subtracted beneath peak. C078300100018 STATUS Data taken from Table I in reference. C078300100019 (APRVD) Approved by J.A. Kuehner, 26 March 2001. C078300100020 HISTORY (20010214C) VM C078300100021 ENDBIB 19 0 C078300100022 NOCOMMON 0 0 C078300100023 ENDSUBENT 22 0 C078300199999 SUBENT C0783002 20010214 0000C078300200001 BIB 1 1 C078300200002 REACTION (14-SI-28(D,A)13-AL-26,20/PAR,POL/DA,,TAP) C078300200003 ENDBIB 1 0 C078300200004 COMMON 2 3 C078300200005 E-EXC ANG C078300200006 MEV ADEG C078300200007 4.48 4. C078300200008 ENDCOMMON 3 0 C078300200009 DATA 3 5 C078300200010 EN DATA ERR-S C078300200011 MEV NO-DIM NO-DIM C078300200012 8.0 -1.25 0.14 C078300200013 8.5 -1.27 0.09 C078300200014 9.0 -1.51 0.08 C078300200015 9.5 -1.35 0.09 C078300200016 12.0 -1.36 0.09 C078300200017 ENDDATA 7 0 C078300200018 ENDSUBENT 17 0 C078300299999 ENDENTRY 2 0 C078399999999