ENTRY C0951 20040107 0000C095100000001 SUBENT C0951001 20040107 0000C095100100001 BIB 11 14 C095100100002 INSTITUTE (1USAOSU) C095100100003 REFERENCE (J,NIM,109,327,1973) C095100100004 AUTHOR (C.N.Chang,J.J.Kent,J.F.Morgan,S.L.Blatt) C095100100005 TITLE Total cross section measurements by x-ray detection of C095100100006 electron-capture residual activity C095100100007 FACILITY (VDG,1USAOSU) C095100100008 SAMPLE 48Ti target areal density of 485 microg/cm2. C095100100009 METHOD (BCINT) C095100100010 DETECTOR (SILI) Thin lithium-drifted Si wafer. C095100100011 MONITOR Detector efficiency determined using calibrated 55Fe C095100100012 source. C095100100013 ERR-ANALYS (DATA-ERR) Estimated accuracy including statistical C095100100014 and systematic uncertainties. C095100100015 HISTORY (20040107C) VM C095100100016 ENDBIB 14 0 C095100100017 NOCOMMON 0 0 C095100100018 ENDSUBENT 17 0 C095100199999 SUBENT C0951002 20040107 0000C095100200001 BIB 2 2 C095100200002 REACTION (22-TI-48(A,N)24-CR-51,,SIG) C095100200003 STATUS Data taken from Table 1 in reference. C095100200004 ENDBIB 2 0 C095100200005 NOCOMMON 0 0 C095100200006 DATA 3 7 C095100200007 EN DATA DATA-ERR C095100200008 MEV MB PER-CENT C095100200009 5. 0.00496 16. C095100200010 6. 4.00 16. C095100200011 7. 43.0 14. C095100200012 8. 100.4 14. C095100200013 9. 238.0 14. C095100200014 10. 250.4 14. C095100200015 11. 327.2 14. C095100200016 ENDDATA 9 0 C095100200017 ENDSUBENT 16 0 C095100299999 ENDENTRY 2 0 C095199999999