ENTRY C1682 20090519 C091C168200000001 SUBENT C1682001 20090519 C091C168200100001 BIB 10 36 C168200100002 TITLE Cross section limits for the C168200100003 248Cm(25Mg, 4n-5n)268,269Hs reactions C168200100004 AUTHOR (J.Dvorak,W.Bruchle,Ch.E.Dullmann,Z.Dvorakova, C168200100005 K.Eberhardt,R.Eichler,E.Jager,Y.Nagame,Z.Qin, C168200100006 M.Schadel,B.Schausten,E.Schimpf,R.Schuber, C168200100007 A.Semchenkov,P.Thorle,A.Turler,M.Wegrzecki,A.Ykushev) C168200100008 INSTITUTE (2GERMUN,2GERGSI,2GERMNZ,2SWTPSI,2JPNJAE,3CPRIMP) C168200100009 (3POLPOL) Institute of Electron Technology, C168200100010 Warsaw, Poland C168200100011 REFERENCE (J,PR/C,79,037602,2009) C168200100012 FACILITY (LINAC,2GERGSI) A beam of 25Mg ions was accelerated C168200100013 by the UNILAC at the GSI to 7.45 MeV/nucleon C168200100014 and impinged on a rotating 248Cm target. C168200100015 SAMPLE The target consisted of three arc shaped segments C168200100016 with initial average thicknesses of 788 mu-g/cm2, C168200100017 743 mu-g/cm2 and 244 mu-g/cm2 of Cm with C168200100018 248Cm: 95.8%, 246Cm: 4.2%). One segment contained C168200100019 2% in weight of 152Gd (30% isotopic enrichment) C168200100020 for the simultaneous production of alpha decaying Os C168200100021 isotopes. Os is a chemical homolog of Hs. C168200100022 METHOD (CHSEP) Fast chemical separation was used. Products C168200100023 of the nuclear reactions recoiled from the target C168200100024 and were stopped and thermalized in a He/O2 mixture C168200100025 in the recoil chamber (RC), where they were partially C168200100026 oxidized. Species volatile at room temperature were C168200100027 transported further through a PTFE (Teflon) capillary C168200100028 kept at ambient temperature to the detection system C168200100029 COMPACT, which is constructed as a thermochromatographyC168200100030 column, formed by Passivated Implanted Planar Silicon C168200100031 diodes suitable for the detection of alpha particles C168200100032 and fission fragments. C168200100033 DETECTOR (SI) Passivated Implanted Planar Silicon diodes. C168200100034 HISTORY (20090409C) Compiled by S.H. C168200100035 MONITOR (64-GD-152(12-MG-25,X)76-OS-171,,SIG) C168200100036 (64-GD-152(12-MG-25,X)76-OS-172,,SIG) C168200100037 (64-GD-152(12-MG-25,X)76-OS-173,,SIG) C168200100038 ENDBIB 36 0 C168200100039 NOCOMMON 0 0 C168200100040 ENDSUBENT 39 0 C168200199999 SUBENT C1682002 20090519 C091C168200200001 BIB 2 2 C168200200002 REACTION (96-CM-248(12-MG-25,4N)108-HS-269,,SIG) C168200200003 STATUS (TABLE) Data taken from text p. 4 of the reference C168200200004 ENDBIB 2 0 C168200200005 NOCOMMON 0 0 C168200200006 DATA 2 1 C168200200007 EN DATA-MAX C168200200008 MEV PB C168200200009 140.0 0.6 C168200200010 ENDDATA 3 0 C168200200011 ENDSUBENT 10 0 C168200299999 SUBENT C1682003 20090519 C091C168200300001 BIB 2 2 C168200300002 REACTION (96-CM-248(12-MG-25,5N)108-HS-268,,SIG) C168200300003 STATUS (TABLE) Data taken from text p. 4 of the reference C168200300004 ENDBIB 2 0 C168200300005 NOCOMMON 0 0 C168200300006 DATA 2 1 C168200300007 EN DATA-MAX C168200300008 MEV PB C168200300009 140.0 1.3 C168200300010 ENDDATA 3 0 C168200300011 ENDSUBENT 10 0 C168200399999 ENDENTRY 3 0 C168299999999