ENTRY C2101 20140410 C142C210100000001 SUBENT C2101001 20140410 C142C210100100001 BIB 9 15 C210100100002 TITLE Techniques for Studying Hydrogen and Helium Isotopes C210100100003 in Materials: Ion Backscattering and Nuclear C210100100004 Microanalysis C210100100005 AUTHOR (R.A.Langley) C210100100006 REFERENCE (C,75GATLIN,4,158,1975) C210100100007 INSTITUTE (1USASC) C210100100008 FACILITY (VDGT,1USASC) C210100100009 PART-DET (P) C210100100010 DETECTOR (SOLST) Solid state detector of protons. C210100100011 METHOD In order to be able to optimize depth resolution and C210100100012 sensitivity, the target chamber must allow variation C210100100013 of certain parameters. These variables include the C210100100014 angle of incidence of the ion beam on the sample and C210100100015 the scattering angle. C210100100016 HISTORY (20140410C) BP C210100100017 ENDBIB 15 0 C210100100018 NOCOMMON 0 0 C210100100019 ENDSUBENT 18 0 C210100199999 SUBENT C2101002 20140410 C142C210100200001 BIB 3 4 C210100200002 REACTION (1-H-2(P,EL)1-H-2,,DA) C210100200003 SAMPLE Erbium deuteride films of thicknesses ~8000 A were C210100200004 prepared by deposition of erbium on various substrates.C210100200005 STATUS (CURVE) Fig.5, page IV-166. C210100200006 ENDBIB 4 0 C210100200007 COMMON 1 3 C210100200008 ANG-CM C210100200009 ADEG C210100200010 165.0 C210100200011 ENDCOMMON 3 0 C210100200012 DATA 2 10 C210100200013 EN DATA-CM C210100200014 MEV MB/SR C210100200015 2.013 416.190 C210100200016 2.013 416.190 C210100200017 2.109 411.746 C210100200018 2.210 406.667 C210100200019 2.309 401.587 C210100200020 2.408 397.143 C210100200021 2.509 392.698 C210100200022 2.610 387.619 C210100200023 2.709 383.175 C210100200024 2.792 378.730 C210100200025 ENDDATA 12 0 C210100200026 ENDSUBENT 25 0 C210100299999 SUBENT C2101003 20140410 C142C210100300001 BIB 3 5 C210100300002 REACTION (1-H-2(P,EL)1-H-2,,DA,,RTH) C210100300003 SAMPLE Erbium deuteride films of thicknesses ~8000 A were C210100300004 prepared by deposition of erbium on various substrates.C210100300005 STATUS (CURVE) Fig.5, page IV-166. C210100300006 (DEP,C2101002) C210100300007 ENDBIB 5 0 C210100300008 COMMON 1 3 C210100300009 ANG-CM C210100300010 ADEG C210100300011 165.0 C210100300012 ENDCOMMON 3 0 C210100300013 DATA 2 10 C210100300014 EN DATA C210100300015 MEV NO-DIM C210100300016 2.008 133.050 C210100300017 2.101 148.303 C210100300018 2.203 164.828 C210100300019 2.304 181.353 C210100300020 2.405 197.878 C210100300021 2.504 214.403 C210100300022 2.504 214.403 C210100300023 2.603 230.928 C210100300024 2.706 247.452 C210100300025 2.792 261.435 C210100300026 ENDDATA 12 0 C210100300027 ENDSUBENT 26 0 C210100399999 SUBENT C2101004 20140410 C142C210100400001 BIB 2 2 C210100400002 REACTION (1-H-3(P,EL)1-H-3,,DA) C210100400003 STATUS (CURVE) Fig.6, page IV-167. C210100400004 ENDBIB 2 0 C210100400005 COMMON 1 3 C210100400006 ANG-CM C210100400007 ADEG C210100400008 168.7 C210100400009 ENDCOMMON 3 0 C210100400010 DATA 2 4 C210100400011 EN DATA-CM C210100400012 MEV MB/SR C210100400013 2.766 244.989 C210100400014 3.048 223.881 C210100400015 3.266 213.006 C210100400016 3.513 202.772 C210100400017 ENDDATA 6 0 C210100400018 ENDSUBENT 17 0 C210100499999 SUBENT C2101005 20140410 C142C210100500001 BIB 2 3 C210100500002 REACTION (1-H-3(P,EL)1-H-3,,DA,,RTH) C210100500003 STATUS (CURVE) Fig.6, page IV-167. C210100500004 (DEP,C2101004) C210100500005 ENDBIB 3 0 C210100500006 COMMON 1 3 C210100500007 ANG-CM C210100500008 ADEG C210100500009 168.7 C210100500010 ENDCOMMON 3 0 C210100500011 DATA 2 4 C210100500012 EN DATA C210100500013 MEV NO-DIM C210100500014 2.766 763.130 C210100500015 3.048 861.614 C210100500016 3.272 952.523 C210100500017 3.513 1053.533 C210100500018 ENDDATA 6 0 C210100500019 ENDSUBENT 18 0 C210100599999 SUBENT C2101006 20140410 C142C210100600001 BIB 2 2 C210100600002 REACTION (2-HE-3(P,EL)2-HE-3,,DA) C210100600003 STATUS (CURVE) Fig.7, page IV-167. C210100600004 ENDBIB 2 0 C210100600005 COMMON 1 3 C210100600006 ANG-CM C210100600007 ADEG C210100600008 166.0 C210100600009 ENDCOMMON 3 0 C210100600010 DATA 2 12 C210100600011 EN DATA-CM C210100600012 MEV MB/SR C210100600013 2.095 200.000 C210100600014 2.278 212.782 C210100600015 2.445 224.812 C210100600016 2.665 238.346 C210100600017 2.856 247.368 C210100600018 3.099 257.143 C210100600019 3.312 261.654 C210100600020 3.783 265.414 C210100600021 4.072 263.910 C210100600022 4.300 260.902 C210100600023 4.513 257.895 C210100600024 4.757 252.632 C210100600025 ENDDATA 14 0 C210100600026 ENDSUBENT 25 0 C210100699999 SUBENT C2101007 20140410 C142C210100700001 BIB 2 3 C210100700002 REACTION (2-HE-3(P,EL)2-HE-3,,DA,,RTH) C210100700003 STATUS (CURVE) Fig.7, page IV-167. C210100700004 (DEP,C2101006) C210100700005 ENDBIB 3 0 C210100700006 COMMON 1 3 C210100700007 ANG-CM C210100700008 ADEG C210100700009 166.0 C210100700010 ENDCOMMON 3 0 C210100700011 DATA 2 12 C210100700012 EN DATA C210100700013 MEV NO-DIM C210100700014 2.057 90.965 C210100700015 2.247 116.564 C210100700016 2.407 139.150 C210100700017 2.620 172.277 C210100700018 2.817 208.416 C210100700019 3.068 252.084 C210100700020 3.281 292.740 C210100700021 3.760 386.098 C210100700022 4.057 443.317 C210100700023 4.300 491.502 C210100700024 4.506 536.676 C210100700025 4.764 595.401 C210100700026 ENDDATA 14 0 C210100700027 ENDSUBENT 26 0 C210100799999 SUBENT C2101008 20140410 C142C210100800001 BIB 3 5 C210100800002 REACTION (2-HE-4(P,EL)2-HE-4,,DA) C210100800003 SAMPLE An implantation of 2E17 atoms/cm2 was made in an C210100800004 erbium dideuteride film on a kovar substrate at an C210100800005 energy of 50 keV. C210100800006 STATUS (CURVE) Fig.8, page IV-168. C210100800007 ENDBIB 5 0 C210100800008 COMMON 1 3 C210100800009 ANG-CM C210100800010 ADEG C210100800011 168.0 C210100800012 ENDCOMMON 3 0 C210100800013 DATA 2 6 C210100800014 EN DATA-CM C210100800015 MEV MB/SR C210100800016 1.708 312.093 C210100800017 2.018 438.605 C210100800018 2.237 472.093 C210100800019 2.551 433.023 C210100800020 3.050 280.465 C210100800021 3.598 194.884 C210100800022 ENDDATA 8 0 C210100800023 ENDSUBENT 22 0 C210100899999 SUBENT C2101009 20140410 C142C210100900001 BIB 3 6 C210100900002 REACTION (2-HE-4(P,EL)2-HE-4,,DA,,RTH) C210100900003 SAMPLE An implantation of 2E17 atoms/cm2 was made in an C210100900004 erbium dideuteride film on a kovar substrate at an C210100900005 energy of 50 keV. C210100900006 STATUS (CURVE) Fig.8, page IV-168. C210100900007 (DEP,C2101008) C210100900008 ENDBIB 6 0 C210100900009 COMMON 1 3 C210100900010 ANG-CM C210100900011 ADEG C210100900012 168.0 C210100900013 ENDCOMMON 3 0 C210100900014 DATA 2 8 C210100900015 EN DATA C210100900016 MEV NO-DIM C210100900017 1.704 109.434 C210100900018 2.003 216.979 C210100900019 2.260 288.676 C210100900020 2.506 333.958 C210100900021 2.751 339.618 C210100900022 3.016 315.090 C210100900023 3.262 305.656 C210100900024 3.496 303.770 C210100900025 ENDDATA 10 0 C210100900026 ENDSUBENT 25 0 C210100999999 ENDENTRY 9 0 C210199999999