ENTRY D0097 20040126 0000D009700000001 SUBENT D0097001 20040126 0000D009700100001 BIB 11 22 D009700100002 TITLE Aplha backscattering used in stoichiometry D009700100003 determination of thin SiC coatings on Si(100) wafers D009700100004 AUTHOR (R.Somatri,J.F.Chailan,A.Chevarier,N.Chevarier,G.Ferro,D009700100005 Y.Monteil,H.Vincent,J.Bouix) D009700100006 INSTITUTE (2FR LYO) D009700100007 REFERENCE (J,NIM/B,113,284,1996) D009700100008 FACILITY (VDG) D009700100009 SAMPLE SiC layer. Three samples with thicknesses: 53, 7 and D009700100010 2.3 mu-g/cm2 with dilution ratio (H2/C3H8): 2000, D009700100011 200 and 500, respectively. D009700100012 The wafers were p-type Si(100) sigle crystals of D009700100013 600-mu-m thickness. The sample preparation included D009700100014 methanol/ultrasonic cleaning and deoxydation in D009700100015 HF (5%) for 30 sec. without any subsequent contact D009700100016 with water. D009700100017 DETECTOR The detector was set at 172 degr. with respect to D009700100018 beam direction D009700100019 MONITOR Beam energy calibrated using resonance at 3.034 MeV D009700100020 in 16O(alpha,alpha) reaction D009700100021 STATUS (TABLE) Tables from the article D009700100022 ERR-ANALYS (ERR-T) Total error D009700100023 HISTORY (20040126C) SD D009700100024 ENDBIB 22 0 D009700100025 COMMON 2 3 D009700100026 ANG ERR-T D009700100027 ADEG PER-CENT D009700100028 172. 5. D009700100029 ENDCOMMON 3 0 D009700100030 ENDSUBENT 29 0 D009700199999 SUBENT D0097002 20040126 0000D009700200001 BIB 1 1 D009700200002 REACTION (6-C-12(A,EL)6-C-12,,DA) D009700200003 ENDBIB 1 0 D009700200004 NOCOMMON 0 0 D009700200005 DATA 2 19 D009700200006 EN DATA D009700200007 MEV MB/SR D009700200008 4.035 60. D009700200009 4.135 48. D009700200010 4.195 54. D009700200011 4.205 58. D009700200012 4.215 182. D009700200013 4.225 186. D009700200014 4.235 349. D009700200015 4.245 650. D009700200016 4.255 1200. D009700200017 4.265 1130. D009700200018 4.275 1020. D009700200019 4.285 500. D009700200020 4.295 440. D009700200021 4.305 420. D009700200022 4.315 410. D009700200023 4.335 400. D009700200024 4.440 300. D009700200025 4.535 136. D009700200026 4.635 139. D009700200027 ENDDATA 21 0 D009700200028 ENDSUBENT 27 0 D009700299999 SUBENT D0097003 20040126 0000D009700300001 BIB 1 1 D009700300002 REACTION (14-SI-0(A,EL)14-SI-0,,DA) D009700300003 ENDBIB 1 0 D009700300004 NOCOMMON 0 0 D009700300005 DATA 2 30 D009700300006 EN DATA D009700300007 MEV MB/SR D009700300008 3.835 60. D009700300009 3.845 70. D009700300010 3.860 40. D009700300011 3.865 71. D009700300012 3.885 71. D009700300013 3.935 67. D009700300014 3.985 68. D009700300015 4.035 58. D009700300016 4.085 56. D009700300017 4.135 54. D009700300018 4.165 50. D009700300019 4.185 55. D009700300020 4.200 76. D009700300021 4.205 56. D009700300022 4.235 37. D009700300023 4.285 36. D009700300024 4.335 59. D009700300025 4.355 62. D009700300026 4.365 81. D009700300027 4.375 120. D009700300028 4.385 22. D009700300029 4.395 20. D009700300030 4.405 23. D009700300031 4.425 30. D009700300032 4.445 35. D009700300033 4.465 40. D009700300034 4.485 44. D009700300035 4.535 53. D009700300036 4.585 43. D009700300037 4.635 35. D009700300038 ENDDATA 32 0 D009700300039 ENDSUBENT 38 0 D009700399999 ENDENTRY 3 0 D009799999999