ENTRY D0098 20200819 D128D009800000001 SUBENT D0098001 20200819 D128D009800100001 BIB 9 14 D009800100002 TITLE Determination of the total amount of oxygen atoms in D009800100003 silicon oxide surface layers by the nuclear reactions D009800100004 16O(d,p1)17O* and 16O(d,a)14N D009800100005 AUTHOR (A.Turos, L.Wielunski, J.Olenski) D009800100006 INSTITUTE (3POLIBJ) D009800100007 (3POLPOL) Institute of Electron Technology, Warsaw D009800100008 REFERENCE (J,PSS/A,16,211,1973) D009800100009 FACILITY (VDG,3POLIBJ) D009800100010 SAMPLE Thermaly grown SiO2 layers on silicon D009800100011 DETECTOR (SIBAR) D009800100012 STATUS (CURVE) Fig.2 of Phys.Status Solidi A16(1973)211 D009800100013 HISTORY (20040209C) SD D009800100014 (20070212U) Page of the ref. was corrected D009800100015 (20200819U) On. INSTITUTE, REFERENCE, FACILITY updated D009800100016 ENDBIB 14 0 D009800100017 NOCOMMON 0 0 D009800100018 ENDSUBENT 17 0 D009800199999 SUBENT D0098002 20040209 0000D009800200001 BIB 2 3 D009800200002 REACTION (8-O-16(D,P)8-O-17,PAR,DA) D009800200003 ERR-ANALYS (EN-ERR-DIG) Digitizing error D009800200004 (ERR-DIG) Digitizing error D009800200005 ENDBIB 3 0 D009800200006 COMMON 4 3 D009800200007 E-LVL ANG EN-ERR-DIG ERR-DIG D009800200008 KEV ADEG KEV MB/SR D009800200009 870.73 145. 0.5 0.02 D009800200010 ENDCOMMON 3 0 D009800200011 DATA 2 20 D009800200012 EN DATA D009800200013 KEV MB/SR D009800200014 760.88 3.8291 D009800200015 770.49 4.1690 D009800200016 789.64 4.7655 D009800200017 800.60 4.7690 D009800200018 809.33 4.7219 D009800200019 820.87 4.7519 D009800200020 830.79 4.8133 D009800200021 840.59 4.7360 D009800200022 850.46 4.7420 D009800200023 860.64 4.4694 D009800200024 871.06 4.4741 D009800200025 880.48 4.5922 D009800200026 890.28 4.5149 D009800200027 899.77 4.7161 D009800200028 910.31 4.8595 D009800200029 919.80 5.0607 D009800200030 930.68 5.5922 D009800200031 940.53 6.2094 D009800200032 950.52 7.6318 D009800200033 957.67 9.5606 D009800200034 ENDDATA 22 0 D009800200035 ENDSUBENT 34 0 D009800299999 ENDENTRY 2 0 D009899999999