ENTRY D0117 20040220 0000D011700000001 SUBENT D0117001 20040220 0000D011700100001 BIB 10 15 D011700100002 TITLE Determination of nitrogen in semiconductor materials D011700100003 using the 14N(p,a)11C and 14N(d,n)15O nuclear reactionsD011700100004 AUTHOR (F.Koehl,J.Krauskopf,P.Misaelide,R.Michelmann, D011700100005 G.Wolf,K.Behge) D011700100006 INSTITUTE (2GERFRK,2GERGER,2GRCGRC) D011700100007 REFERENCE (J,NIM/B,50,19,1990) D011700100008 FACILITY (VDG,2GERFRK) D011700100009 DETECTOR (NAICR) Two 4 x 4 in. NaI(Tl) detectors switched in D011700100010 concidence D011700100011 METHOD (ACTIV) D011700100012 ERR-ANALYS (EN-ERR-DIG) Digitizing error D011700100013 (ERR-DIG) Digitizing error D011700100014 (DATA-ERR) Overall uncertainty D011700100015 STATUS (CURVE)Curves from the article D011700100016 HISTORY (20040220C) SD D011700100017 ENDBIB 15 0 D011700100018 NOCOMMON 0 0 D011700100019 ENDSUBENT 18 0 D011700199999 SUBENT D0117002 20040220 0000D011700200001 BIB 3 4 D011700200002 REACTION (7-N-14(P,A)6-C-11,,SIG) D011700200003 DECAY-DATA (6-C-11,20.3MIN,AR) D011700200004 SAMPLE 0.5 mu-m thick low-temperature-CVD silicon nitride D011700200005 targets deposited on a high-purity silicon substrate D011700200006 ENDBIB 4 0 D011700200007 COMMON 3 3 D011700200008 EN-ERR-DIG ERR-DIG DATA-ERR D011700200009 MEV MB PER-CENT D011700200010 0.03 0.5 12. D011700200011 ENDCOMMON 3 0 D011700200012 DATA 2 36 D011700200013 EN DATA D011700200014 MEV MB D011700200015 5.2295 57.959 D011700200016 5.2806 48.479 D011700200017 5.3303 50.686 D011700200018 5.3797 54.268 D011700200019 5.4307 45.475 D011700200020 5.4876 62.146 D011700200021 5.5329 62.965 D011700200022 5.5788 58.971 D011700200023 5.6344 49.504 D011700200024 5.6806 42.761 D011700200025 5.7307 41.530 D011700200026 5.7838 52.000 D011700200027 5.8323 63.144 D011700200028 5.8856 72.239 D011700200029 5.9354 73.071 D011700200030 5.9856 106.92 D011700200031 6.0373 129.07 D011700200032 6.0898 180.12 D011700200033 6.1341 116.97 D011700200034 6.1904 66.245 D011700200035 6.2369 57.439 D011700200036 6.2850 71.333 D011700200037 6.3387 77.678 D011700200038 6.3826 88.809 D011700200039 6.4405 97.917 D011700200040 6.4893 106.31 D011700200041 6.5386 111.27 D011700200042 6.5859 132.04 D011700200043 6.6385 182.39 D011700200044 6.6917 192.86 D011700200045 6.7441 244.60 D011700200046 6.7925 220.67 D011700200047 6.8436 247.63 D011700200048 6.8969 256.04 D011700200049 6.9469 291.26 D011700200050 6.9941 241.19 D011700200051 ENDDATA 38 0 D011700200052 ENDSUBENT 51 0 D011700299999 SUBENT D0117003 20040220 0000D011700300001 BIB 3 4 D011700300002 REACTION (7-N-14(D,N)8-O-15,,SIG) D011700300003 DECAY-DATA (8-O-15,124.SEC,AR) D011700300004 SAMPLE The targets were prepared by nitrogen implantation D011700300005 in 0.25 mm thick tantalum foils D011700300006 ENDBIB 4 0 D011700300007 COMMON 2 3 D011700300008 EN-ERR-DIG ERR-DIG D011700300009 MEV PER-CENT D011700300010 0.04 0.2 D011700300011 ENDCOMMON 3 0 D011700300012 DATA 3 16 D011700300013 EN DATA DATA-ERR D011700300014 MEV MB MB D011700300015 0.84594 7.0846 D011700300016 1.1580 17.046 D011700300017 1.5524 26.931 D011700300018 1.7485 32.660 D011700300019 1.8959 52.245 D011700300020 2.0366 66.719 D011700300021 2.3053 134.93 15.600 D011700300022 3.0429 219.17 21.329 D011700300023 3.5589 236.80 28.273 D011700300024 4.0381 266.64 31.786 D011700300025 4.5700 260.01 D011700300026 5.0423 233.72 36.021 D011700300027 5.5361 227.99 32.457 D011700300028 6.0303 224.68 24.265 D011700300029 6.5419 210.34 D011700300030 7.0339 192.96 D011700300031 ENDDATA 18 0 D011700300032 ENDSUBENT 31 0 D011700399999 ENDENTRY 3 0 D011799999999