ENTRY D0131 20060721 D048D013100000001 SUBENT D0131001 20060721 D048D013100100001 BIB 9 13 D013100100002 TITLE Simultaneous nuclear microanalysis of nitrogen and D013100100003 oxygen on silicon D013100100004 AUTHOR (M.Berti,A.V.Drigo) D013100100005 INSTITUTE (2ITYPAD) D013100100006 REFERENCE (J,NIM,201,473,1982) D013100100007 FACILITY (VDG) D013100100008 DETECTOR (SIBAR) a 300 mm2 surface barrier detector placed at D013100100009 about 76 mm from the target (giving a solid angle of D013100100010 0.052 sr) and at 150 degr. from the beam. D013100100011 ERR-ANALYS (DATA-ERR) Experimental error D013100100012 STATUS (CURVE)Curves from the article D013100100013 HISTORY (20040229C) SD D013100100014 (20060721A) Corrected the page of the ref. D013100100015 ENDBIB 13 0 D013100100016 COMMON 3 3 D013100100017 ANG EN-ERR-DIG DATA-ERR D013100100018 ADEG MEV PER-CENT D013100100019 150. 0.0004 10. D013100100020 ENDCOMMON 3 0 D013100100021 ENDSUBENT 20 0 D013100199999 SUBENT D0131002 20040229 0000D013100200001 BIB 5 6 D013100200002 REACTION (8-O-16(D,P)8-O-17,PAR,DA) D013100200003 SAMPLE Ta2O5 film D013100200004 EN-SEC (E-LVL,8-O-17) D013100200005 ERR-ANALYS (EN-ERR-DIG) Digitizing error D013100200006 (ERR-DIG) Digitizing error D013100200007 STATUS (CURVE) fig.4 D013100200008 ENDBIB 6 0 D013100200009 COMMON 2 3 D013100200010 E-LVL ERR-DIG D013100200011 MEV MB/SR D013100200012 0.0 0.001 D013100200013 ENDCOMMON 3 0 D013100200014 DATA 2 31 D013100200015 EN DATA D013100200016 MEV MB/SR D013100200017 0.54610 0.21812 D013100200018 0.54803 0.23488 D013100200019 0.56591 0.27516 D013100200020 0.56592 0.28060 D013100200021 0.56816 0.31119 D013100200022 0.57598 0.31702 D013100200023 0.57612 0.30467 D013100200024 0.57805 0.32391 D013100200025 0.58589 0.34900 D013100200026 0.58606 0.37073 D013100200027 0.58815 0.38749 D013100200028 0.59406 0.40026 D013100200029 0.59598 0.40666 D013100200030 0.59612 0.40073 D013100200031 0.59819 0.40071 D013100200032 0.60114 0.40709 D013100200033 0.60305 0.40016 D013100200034 0.60599 0.39271 D013100200035 0.60629 0.39715 D013100200036 0.60819 0.38577 D013100200037 0.61610 0.33382 D013100200038 0.61612 0.35308 D013100200039 0.61801 0.32788 D013100200040 0.62608 0.29469 D013100200041 0.62799 0.28677 D013100200042 0.63607 0.25507 D013100200043 0.63827 0.24615 D013100200044 0.64620 0.22334 D013100200045 0.64811 0.21048 D013100200046 0.65591 0.20545 D013100200047 0.65827 0.20245 D013100200048 ENDDATA 33 0 D013100200049 ENDSUBENT 48 0 D013100299999 SUBENT D0131003 20040229 0000D013100300001 BIB 5 7 D013100300002 REACTION (7-N-14(D,P)7-N-15,PAR,DA) D013100300003 SAMPLE Si3N4/Si film D013100300004 EN-SEC (E-LVL,7-N-15) The value for level 5 was taken by D013100300005 compiler from the ENSDF database D013100300006 ERR-ANALYS (EN-ERR-DIG) Digitizing error D013100300007 (ERR-DIG) Digitizing error D013100300008 STATUS (CURVE) fig.5 D013100300009 ENDBIB 7 0 D013100300010 COMMON 2 3 D013100300011 E-LVL ERR-DIG D013100300012 MEV MB/SR D013100300013 7.3 0.006 D013100300014 ENDCOMMON 3 0 D013100300015 DATA 2 10 D013100300016 EN DATA D013100300017 MEV MB/SR D013100300018 0.54510 0.61046 D013100300019 0.56505 0.68415 D013100300020 0.57512 0.74725 D013100300021 0.58519 0.81035 D013100300022 0.59507 0.81699 D013100300023 0.60512 0.85036 D013100300024 0.61502 0.87681 D013100300025 0.62496 0.97162 D013100300026 0.63502 1.0208 D013100300027 0.64509 1.0830 D013100300028 ENDDATA 12 0 D013100300029 ENDSUBENT 28 0 D013100399999 ENDENTRY 3 0 D013199999999