ENTRY D4155 20061110 D052D415500000001 SUBENT D4155001 20061110 D052D415500100001 BIB 13 100 D415500100002 TITLE Gamma ray production cross-sections of deuteron D415500100003 induced nuclear reactions for light element analysis D415500100004 AUTHOR (G.A.Sziki,A.Simon,Z.Szikszai,Zs.Kertesz,E.Dobos) D415500100005 INSTITUTE (3HUNDEB) D415500100006 REFERENCE (J,NIM/B,251,343,2006) D415500100007 FACILITY (VDG,3HUNDEB) D415500100008 SAMPLE Thin film samples were prepared onto Ta and Al D415500100009 substrate simultaneously. D415500100010 For the chemical and thickness analysis of the thin D415500100011 layers Rutherford backscattering spectrometry was D415500100012 applied using focused ion beams of a few tens of D415500100013 micrometer size. DIGE measurements were performed also D415500100014 on the samples with aluminium substrate at 1.8 MeV D415500100015 deuteron energy, approximately on the same areas as D415500100016 the RBS measurements. Comparing the measured gamma D415500100017 yields, the number density of a certain isotope on the D415500100018 tantalum substrate could be deduced from the RBS D415500100019 results for the same isotope on the aluminum foil. D415500100020 METHOD (SITA,GSPEC,TTM) D415500100021 The DIGE measurements were carried out on the right D415500100022 30 degree beamline of the 5 MV Van de Graaff D415500100023 electrostatic accelerator of ATOMKI. D415500100024 The experimental set-up was specially designed in orderD415500100025 to provide ideal circumstances for the measurements. D415500100026 Provision was made to minimize background gamma D415500100027 radiation. D415500100028 The sample was positioned in the middle of an D415500100029 electrically insulated chamber, which served as an D415500100030 ideal Faraday cup. The current dose was measured on D415500100031 the chamber by an ORTEC 439 digital current integrator.D415500100032 The measurement on each thin target was started at a D415500100033 beam energy of 2 MeV and continued downwards with D415500100034 energy steps of 50 keV until 0.6 MeV. In some cases, D415500100035 to see certain parts of the yield curves more detailed,D415500100036 measurements at further energy points were made. To D415500100037 check the stability of each target, control D415500100038 measurements were also made after completing a series D415500100039 of measurements in the 2-0.6 MeV range. The applied D415500100040 beam current was gradually increased from 2 nA to D415500100041 10 nA conforming to the decreasing cross-section valuesD415500100042 with decreasing deuteron energy. D415500100043 ANALYSIS The method that was applied for the accurate D415500100044 determination of gamma-ray production cross-section is D415500100045 based on the basic formula of yield calculus in thick D415500100046 and intermediate thick targets, utilizing thick target D415500100047 yields measured on compounds and also the measured D415500100048 thin target gamma-ray yield curves. D415500100049 DETECTOR (HPGE) The gamma radiation was detected by a HPGe D415500100050 detector, placed at an angle of 60 degree to the beam D415500100051 axis and at a distance of 10 cm from the target. D415500100052 Nominal relative efficiency: 40%, resolution: 2 keV D415500100053 at 1.33 MeV gamma-energy. Length and diameter of the D415500100054 Ge crystal: 61.5 mm and 59.5 mm. D415500100055 The absolute efficiency (the product of the intrinsic D415500100056 efficiency and the solid angle of the detector) was D415500100057 determined by a 152Eu radioactive source, placed at D415500100058 the target position. D415500100059 ERR-ANALYS (EN-ERR) From the excitation curve measurement on a D415500100060 thick target a beam energy spread of 1.5 keV was D415500100061 deduced and an energy shift of 2 keV from the earlier D415500100062 calibration was observed. These shifts cause generally D415500100063 less than 0.5% relative error in the measured cross- D415500100064 section values, and this error does not exceed 2% even D415500100065 at the steepest section of the curves, thus it is D415500100066 negligible in comparison to the other error values. D415500100067 (ERR-S) The statistical error of each presented value D415500100068 was calculated according to the well-known rule of D415500100069 error propagation. Namely, it was derived from the D415500100070 errors of the measured thin target yields and that of D415500100071 K which depends on the thin/thick target yields. D415500100072 The statistical uncertainty of net peak area values wasD415500100073 0.5-2% except some thin target spectra at low D415500100074 bombarding energy where it reached 6-8%. D415500100075 Accuracy of the cross-section data is affected through D415500100076 the following factors: D415500100077 * certified concentration of the analyzed element D415500100078 in the thick target <1.0%, D415500100079 * accumulated charge <0.3%, D415500100080 * absolute efficiency of the gamma-ray detection ~3%, D415500100081 * stopping power of the sample for the bombarding D415500100082 particle ~3%. D415500100083 The fact that the samples have finite thickness can D415500100084 introduce further error which have to be taken into D415500100085 consideration at the 11B(d,p)12B reaction. The D415500100086 contribution is less than 2% above 1.2 MeV but can D415500100087 reach 5-10% at low deuteron energies. D415500100088 From the above-mentioned data it follows that the D415500100089 overall accuracy of cross-section determination is D415500100090 less then 7% in the case of the 6Li(d,p)7Li, D415500100091 9Be(d,n)10B, D415500100092 16O(d,p)17O and D415500100093 19F(d,p)20F reactions D415500100094 and less than 9% at the 11B(d,p)12B reaction, except D415500100095 some low energy data of minor analytical importance. D415500100096 ADD-RES Fitting adequate functions to the measured values D415500100097 below 1 MeV, the yield curves were extrapolated to the D415500100098 0-0.6 MeV energy range and then converted into D415500100099 cross-sections. D415500100100 HISTORY (20061110C) KB D415500100101 STATUS (APRVD) G.A. Sziki 2007.01.19. D415500100102 ENDBIB 100 0 D415500100103 COMMON 2 3 D415500100104 ANG EN-ERR D415500100105 ADEG KEV D415500100106 60. 1.5 D415500100107 ENDCOMMON 3 0 D415500100108 ENDSUBENT 107 0 D415500199999 SUBENT D4155002 20061110 D052D415500200001 BIB 4 7 D415500200002 REACTION (3-LI-6(D,P)3-LI-7,PAR,DA,G) D415500200003 PART-DET (G) 478 keV D415500200004 SAMPLE LiF layer on Ta substrate made by vacuum evaporation. D415500200005 Thickness: 12+-1 microg/cm**2. D415500200006 Number of nuclei: 6,7Li (311+-15)E+15 atom/cm**2, D415500200007 19F (273+-12)E+15 atom/cm**2. D415500200008 STATUS (TABLE) Data were taken from Table 3 of the ref. D415500200009 ENDBIB 7 0 D415500200010 COMMON 1 3 D415500200011 E D415500200012 KEV D415500200013 478.0 D415500200014 ENDCOMMON 3 0 D415500200015 DATA 3 28 D415500200016 EN DATA ERR-S D415500200017 KEV MB/SR MB/SR D415500200018 2000. 143. 2. D415500200019 1950. 146. 2. D415500200020 1900. 139. 2. D415500200021 1850. 136. 2. D415500200022 1800. 134. 2. D415500200023 1775. 125. 2. D415500200024 1750. 125. 2. D415500200025 1725. 125. 2. D415500200026 1700. 124. 2. D415500200027 1675. 119. 2. D415500200028 1650. 113. 1. D415500200029 1600. 111. 1. D415500200030 1550. 104. 1. D415500200031 1500. 101. 1. D415500200032 1450. 93.9 1.3 D415500200033 1400. 87.8 1.3 D415500200034 1350. 85.7 1.2 D415500200035 1300. 81.3 1.2 D415500200036 1250. 79.2 1.1 D415500200037 1200. 75.6 1.1 D415500200038 1150. 69.4 1.0 D415500200039 1100. 58.7 0.9 D415500200040 1050. 54.0 0.8 D415500200041 1000. 39.9 0.7 D415500200042 950. 25.8 0.5 D415500200043 900. 15.7 0.5 D415500200044 850. 8.54 0.35 D415500200045 800. 4.87 0.33 D415500200046 ENDDATA 30 0 D415500200047 ENDSUBENT 46 0 D415500299999 SUBENT D4155003 20061110 D052D415500300001 BIB 4 6 D415500300002 REACTION (4-BE-9(D,N)5-B-10,PAR,DA,G) D415500300003 PART-DET (G) 718 keV D415500300004 SAMPLE Be layer on Ta substrate made by vacuum evaporation. D415500300005 Thickness: 40+-3 microg/cm**2. D415500300006 Number of nuclei: 9Be (2650+-175)E+15 atom/cm**2. D415500300007 STATUS (TABLE) Data were taken from Table 3 of the ref. D415500300008 ENDBIB 6 0 D415500300009 COMMON 1 3 D415500300010 E D415500300011 KEV D415500300012 718.0 D415500300013 ENDCOMMON 3 0 D415500300014 DATA 3 28 D415500300015 EN DATA ERR-S D415500300016 KEV MB/SR MB/SR D415500300017 2000. 17.4 0.3 D415500300018 1950. 17.5 0.3 D415500300019 1850. 17.7 0.3 D415500300020 1800. 17.6 0.3 D415500300021 1750. 17.8 0.3 D415500300022 1700. 18.0 0.3 D415500300023 1650. 18.2 0.3 D415500300024 1600. 17.4 0.3 D415500300025 1550. 17.6 0.3 D415500300026 1500. 17.7 0.3 D415500300027 1450. 17.5 0.2 D415500300028 1400. 16.6 0.2 D415500300029 1350. 16.2 0.2 D415500300030 1300. 16.2 0.2 D415500300031 1250. 16.0 0.2 D415500300032 1200. 16.1 0.2 D415500300033 1150. 15.2 0.2 D415500300034 1100. 14.9 0.2 D415500300035 1050. 14.6 0.2 D415500300036 1000. 14.3 0.2 D415500300037 950. 12.9 0.2 D415500300038 900. 12.3 0.2 D415500300039 850. 11.6 0.2 D415500300040 800. 10.9 0.2 D415500300041 750. 10.2 0.1 D415500300042 700. 9.23 0.13 D415500300043 650. 8.23 0.12 D415500300044 600. 6.99 0.10 D415500300045 ENDDATA 30 0 D415500300046 ENDSUBENT 45 0 D415500399999 SUBENT D4155004 20061110 D052D415500400001 BIB 4 8 D415500400002 REACTION (5-B-11(D,P)5-B-12,PAR,DA,G) D415500400003 PART-DET (G) 953 keV and 1674 keV D415500400004 SAMPLE LiBO2 layer on Ta substrate made by vacuum evaporation.D415500400005 Thickness: 68+-4 microg/cm**2. D415500400006 Number of nuclei: 6,7Li (816+-47)E+15 atom/cm**2, D415500400007 10,11B (816+-47)E+15 atom/cm**2, D415500400008 16O (1632+-93)E+15 atom/cm**2. D415500400009 STATUS (TABLE) Data were taken from Table 3 of the ref. D415500400010 ENDBIB 8 0 D415500400011 NOCOMMON 0 0 D415500400012 DATA 4 53 D415500400013 E EN DATA ERR-S D415500400014 KEV KEV MB/SR MB/SR D415500400015 953. 2000. 7.88 0.15 D415500400016 953. 1950. 7.81 0.13 D415500400017 953. 1900. 7.45 0.13 D415500400018 953. 1850. 7.31 0.13 D415500400019 953. 1800. 7.03 0.13 D415500400020 953. 1750. 6.72 0.12 D415500400021 953. 1700. 6.73 0.12 D415500400022 953. 1650. 6.62 0.11 D415500400023 953. 1600. 6.25 0.11 D415500400024 953. 1550. 6.22 0.11 D415500400025 953. 1500. 6.15 0.11 D415500400026 953. 1450. 6.07 0.12 D415500400027 953. 1400. 5.83 0.10 D415500400028 953. 1350. 5.64 0.11 D415500400029 953. 1300. 5.25 0.09 D415500400030 953. 1250. 5.07 0.10 D415500400031 953. 1200. 4.70 0.10 D415500400032 953. 1150. 4.37 0.09 D415500400033 953. 1100. 4.01 0.09 D415500400034 953. 1050. 3.74 0.08 D415500400035 953. 1000. 3.39 0.07 D415500400036 953. 950. 3.03 0.07 D415500400037 953. 900. 2.56 0.06 D415500400038 953. 850. 2.08 0.05 D415500400039 953. 800. 1.78 0.04 D415500400040 953. 750. 1.52 0.04 D415500400041 953. 700. 1.19 0.03 D415500400042 953. 650. 0.94 0.03 D415500400043 953. 600. 0.67 0.02 D415500400044 1674. 2000. 12.6 0.2 D415500400045 1674. 1950. 12.3 0.2 D415500400046 1674. 1900. 11.8 0.2 D415500400047 1674. 1850. 11.9 0.2 D415500400048 1674. 1800. 11.5 0.2 D415500400049 1674. 1750. 10.9 0.2 D415500400050 1674. 1700. 10.7 0.2 D415500400051 1674. 1650. 10.2 0.2 D415500400052 1674. 1600. 9.68 0.16 D415500400053 1674. 1550. 9.52 0.16 D415500400054 1674. 1500. 8.79 0.15 D415500400055 1674. 1450. 8.21 0.15 D415500400056 1674. 1400. 6.98 0.13 D415500400057 1674. 1350. 6.45 0.13 D415500400058 1674. 1300. 5.92 0.11 D415500400059 1674. 1250. 4.88 0.11 D415500400060 1674. 1200. 4.18 0.10 D415500400061 1674. 1150. 3.38 0.09 D415500400062 1674. 1100. 2.39 0.08 D415500400063 1674. 1050. 1.71 0.07 D415500400064 1674. 1000. 1.27 0.06 D415500400065 1674. 950. 0.53 0.05 D415500400066 1674. 900. 0.29 0.02 D415500400067 1674. 850. 0.12 0.01 D415500400068 ENDDATA 55 0 D415500400069 ENDSUBENT 68 0 D415500499999 SUBENT D4155005 20061110 D052D415500500001 BIB 4 10 D415500500002 REACTION (8-O-16(D,P)8-O-17,PAR,DA,G) D415500500003 PART-DET (G) 871 keV D415500500004 SAMPLE Titanium-oxide layer was deposited onto Ta substrate D415500500005 by DC reactive magnetron sputtering from pure (99.999%)D415500500006 Ti target. During the deposition the oxygen was added D415500500007 to the argon plasma. D415500500008 Thickness: 27+-1 microg/cm**2. D415500500009 Number of nuclei: 16O (107+-5)E+15 atom/cm**2, D415500500010 46,47,48,49,50Ti (307+-14)E+15 atom/cm**2. D415500500011 STATUS (TABLE) Data were taken from Table 3 of the ref. D415500500012 ENDBIB 10 0 D415500500013 COMMON 1 3 D415500500014 E D415500500015 KEV D415500500016 871.0 D415500500017 ENDCOMMON 3 0 D415500500018 DATA 3 43 D415500500019 EN DATA ERR-S D415500500020 KEV MB/SR MB/SR D415500500021 2000. 32.3 0.5 D415500500022 1950. 28.8 0.5 D415500500023 1900. 23.6 0.5 D415500500024 1850. 20.7 0.4 D415500500025 1800. 19.2 0.4 D415500500026 1750. 19.7 0.4 D415500500027 1700. 20.1 0.4 D415500500028 1650. 19.1 0.4 D415500500029 1600. 17.1 0.3 D415500500030 1550. 15.7 0.3 D415500500031 1500. 14.6 0.3 D415500500032 1450. 15.6 0.3 D415500500033 1400. 15.2 0.3 D415500500034 1350. 13.5 0.3 D415500500035 1325. 12.4 0.2 D415500500036 1315. 12.3 0.2 D415500500037 1305. 14.1 0.3 D415500500038 1295. 11.9 0.2 D415500500039 1285. 10.4 0.2 D415500500040 1275. 9.72 0.17 D415500500041 1250. 8.25 0.17 D415500500042 1200. 6.49 0.14 D415500500043 1150. 6.17 0.14 D415500500044 1100. 5.62 0.12 D415500500045 1050. 7.06 0.14 D415500500046 1025. 8.41 0.15 D415500500047 1010. 9.86 0.16 D415500500048 1000. 10.5 0.2 D415500500049 990. 10.6 0.2 D415500500050 980. 10.9 0.2 D415500500051 970. 11.3 0.2 D415500500052 960. 10.2 0.2 D415500500053 950. 8.57 0.14 D415500500054 940. 7.12 0.13 D415500500055 930. 6.55 0.14 D415500500056 920. 5.67 0.13 D415500500057 900. 5.33 0.12 D415500500058 850. 3.93 0.09 D415500500059 800. 3.60 0.08 D415500500060 750. 2.73 0.08 D415500500061 700. 1.68 0.05 D415500500062 650. 1.23 0.04 D415500500063 600. 0.93 0.04 D415500500064 ENDDATA 45 0 D415500500065 ENDSUBENT 64 0 D415500599999 SUBENT D4155006 20061110 D052D415500600001 BIB 4 7 D415500600002 REACTION (9-F-19(D,P)9-F-20,PAR,DA,G) D415500600003 PART-DET (G) 656 keV D415500600004 SAMPLE LiF layer on Ta substrate made by vacuum evaporation. D415500600005 Thickness: 12+-1 microg/cm**2. D415500600006 Number of nuclei: 6,7Li (311+-15)E+15 atom/cm**2, D415500600007 19F (273+-12)E+15 atom/cm**2. D415500600008 STATUS (TABLE) Data were taken from Table 3 of the ref. D415500600009 ENDBIB 7 0 D415500600010 COMMON 1 3 D415500600011 E D415500600012 KEV D415500600013 656.0 D415500600014 ENDCOMMON 3 0 D415500600015 DATA 3 29 D415500600016 EN DATA ERR-S D415500600017 KEV MB/SR MB/SR D415500600018 2000. 5.82 0.12 D415500600019 1950. 5.32 0.10 D415500600020 1900. 5.06 0.10 D415500600021 1850. 4.59 0.09 D415500600022 1800. 4.31 0.08 D415500600023 1775. 4.05 0.08 D415500600024 1750. 3.95 0.08 D415500600025 1725. 4.00 0.08 D415500600026 1700. 3.63 0.07 D415500600027 1675. 3.48 0.07 D415500600028 1650. 3.37 0.06 D415500600029 1600. 3.16 0.07 D415500600030 1550. 3.12 0.06 D415500600031 1500. 3.01 0.06 D415500600032 1450. 2.54 0.06 D415500600033 1400. 2.34 0.06 D415500600034 1350. 2.03 0.05 D415500600035 1300. 1.89 0.05 D415500600036 1250. 1.76 0.05 D415500600037 1200. 1.55 0.04 D415500600038 1150. 1.14 0.04 D415500600039 1100. 0.84 0.04 D415500600040 1050. 0.73 0.03 D415500600041 1000. 0.58 0.03 D415500600042 950. 0.44 0.03 D415500600043 900. 0.36 0.03 D415500600044 850. 0.29 0.02 D415500600045 800. 0.16 0.01 D415500600046 750. 0.062 0.005 D415500600047 ENDDATA 31 0 D415500600048 ENDSUBENT 47 0 D415500699999 ENDENTRY 6 0 D415599999999