ENTRY E1966 20061228 E041E196600000001 SUBENT E1966001 20061228 E041E196600100001 BIB 15 24 E196600100002 TITLE The radioactivation analysis of semiconductor graphite E196600100003 for nitrogen by the 14N(p,a)11C reaction E196600100004 AUTHOR (T.Nozaki, T.Okuo, H.Akutsu, M.Furukawa) E196600100005 INSTITUTE (2JPNIPC) E196600100006 (2JPNJPN) University of Electrocommunication, Chofu, E196600100007 Tokyo E196600100008 (2JPNTOK) Faculty of Science E196600100009 REFERENCE (J,BCJ,39,(12),2685,196612) E196600100010 REL-REF (A,D0096002,J.P.Blaser+,J,HPA,25,442,1952) E196600100011 DECAY-DATA (6-C-11,,AR) E196600100012 INC-SOURCE Beam intensity is 0.1 micro-Ampere. E196600100013 SAMPLE Physical-form of target is solid. E196600100014 METHOD (ACTIV) Irradiated for 1 min E196600100015 FACILITY (CYCLO,2JPNTOK) Institute for Nuclear Study E196600100016 ANALYSIS (DECAY) To separate 11C from 13N E196600100017 DETECTOR (SCIN) To measure annihilation radiation E196600100018 ERR-ANALYS (ERR-T) Maximum uncertainty in the absolute cross E196600100019 section estimated from errors involved in beam E196600100020 monitoring and in absolute activity E196600100021 measurements E196600100022 STATUS (CURVE) Data scanned from Fig.1, p2686 in reference by E196600100023 RIKEN Nuclear Data Group E196600100024 (APRVD) Digitized data approved by T.Nozaki E196600100025 HISTORY (20060424C) Kc + On E196600100026 ENDBIB 24 0 E196600100027 COMMON 1 3 E196600100028 ERR-T E196600100029 PER-CENT E196600100030 20. E196600100031 ENDCOMMON 3 0 E196600100032 ENDSUBENT 31 0 E196600199999 SUBENT E1966002 20061228 E041E196600200001 BIB 3 5 E196600200002 REACTION (7-N-14(P,A)6-C-11,,SIG) E196600200003 SAMPLE - Chemical-form of target: Nylon films E196600200004 - Target-thickness is about 20 mg/cm**2. E196600200005 METHOD (STTA) Stack consisting of nylon films and aluminum E196600200006 foils E196600200007 ENDBIB 5 0 E196600200008 NOCOMMON 0 0 E196600200009 DATA 3 9 E196600200010 EN-MIN EN-MAX DATA E196600200011 MEV MEV MB E196600200012 4.57 6.21 26.9 E196600200013 6.39 7.73 128.3 E196600200014 7.88 9.01 80.6 E196600200015 9.13 10.2 63.7 E196600200016 10.3 11.2 84.0 E196600200017 11.3 12.2 71.7 E196600200018 12.3 13.2 88.7 E196600200019 13.3 14.0 91.6 E196600200020 14.2 15.0 73.5 E196600200021 ENDDATA 11 0 E196600200022 ENDSUBENT 21 0 E196600299999 SUBENT E1966003 20061228 E041E196600300001 BIB 4 6 E196600300002 REACTION (7-N-14(P,A)6-C-11,,SIG) E196600300003 SAMPLE Chemical-form of target: Aluminium nitride E196600300004 METHOD (STTA) Stack consisting of aluminum nitride films and E196600300005 aluminum foils E196600300006 FLAG (1.) Stack 1 (solid circle in the figure) E196600300007 (2.) Stack 2 (open circle in the figure) E196600300008 ENDBIB 6 0 E196600300009 NOCOMMON 0 0 E196600300010 DATA 3 29 E196600300011 EN DATA FLAG E196600300012 MEV MB NO-DIM E196600300013 3.81 0.5 1. E196600300014 4.19 1.6 E196600300015 4.45 4.0 1. E196600300016 4.80 13. 2. E196600300017 5.12 16. 1. E196600300018 5.38 25. 2. E196600300019 5.80 32. 1. E196600300020 5.96 50. 2. E196600300021 6.22 77. 1. E196600300022 6.51 76. 2. E196600300023 6.70 109. 1. E196600300024 7.01 135. 2. E196600300025 7.16 167. 1. E196600300026 7.49 176. 2. E196600300027 7.59 164. 1. E196600300028 8.00 127. 1. E196600300029 8.02 113. 2. E196600300030 8.42 63. 1. E196600300031 8.49 79. 2. E196600300032 8.95 52. 2. E196600300033 9.58 70. 2. E196600300034 10.09 58. 2. E196600300035 10.59 70. 2. E196600300036 11.13 97. 2. E196600300037 11.65 74. 2. E196600300038 12.18 75. 2. E196600300039 12.80 80. 2. E196600300040 13.41 95. 2. E196600300041 13.96 92. 2. E196600300042 ENDDATA 31 0 E196600300043 ENDSUBENT 42 0 E196600399999 ENDENTRY 3 0 E196699999999